Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Fonte: SBMicro 2001: proceedings. Nome do evento: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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NICOLETT, Aparecido Sirley et al. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. 2001, Anais.. Brasília: SBMicro, 2001. . Acesso em: 16 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2001). A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. In SBMicro 2001: proceedings. Brasília: SBMicro.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 16 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new technique to extract the oxide charge density at front and back interfaces of SOI nMOSFETs devices. SBMicro 2001: proceedings. 2001 ;[citado 2025 nov. 16 ]
