ReP USP - Resultado da busca

Trabalho de evento
Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Trabalho de evento
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures (2000)
Bellodi, Marcello; Iniguez, Benjamin; Raynaud, Cristine; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Bellodi, M., Iniguez, B., Raynaud, C., Flandre, D., & Martino, J. A. (2000). Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Trabalho de evento
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C (2000)
Bellodi, Marcello; Iniguez, Benjamin; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2000). Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 15 ]
Trabalho de evento
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 15 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 15 ]

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