ReP USP - Resultado da busca

Trabalho de evento
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 16 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 16 ]
Trabalho de evento
Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Comparison of analog performance in conventional and graded-channel fully-depleted SOI MOSFETs. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
Trabalho de evento
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures (2000)
Bellodi, Marcello; Iniguez, Benjamin; Raynaud, Cristine; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.
APA
Bellodi, M., Iniguez, B., Raynaud, C., Flandre, D., & Martino, J. A. (2000). Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
Vancouver
Bellodi M, Iniguez B, Raynaud C, Flandre D, Martino JA. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
Trabalho de evento
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C (2000)
Bellodi, Marcello; Iniguez, Benjamin; Flandre, Denis ; Martino, João Antonio
Source: SBMicro 2000 : proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello et al. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.
APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2000). Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. In SBMicro 2000 : proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 16 ]
Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300°C. SBMicro 2000 : proceedings. 2000 ;[citado 2025 nov. 16 ]
Trabalho de evento
Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET (2000)
Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: SBMicro 2000: proceedings. Conference titles: International Conference on Microelectronics and Packaging. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio e FLANDRE, Denis. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. 2000, Anais.. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP, 2000. . Acesso em: 16 nov. 2025.
APA
Pavanello, M. A., Martino, J. A., & Flandre, D. (2000). Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. In SBMicro 2000: proceedings. Manaus: SBMicro/UA/UFRGS/UNICAMP/USP.
NLM
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]
Vancouver
Pavanello MA, Martino JA, Flandre D. Parasitic bipolar effects in graded-channel fully-depleted silicon-on-insulator nMOSFET. SBMicro 2000: proceedings. 2000 ;[citado 2025 nov. 16 ]

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