Filtros : "Radiation Effects and Defects in Solids" "Santilli, C V" Limpar

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  • Source: Radiation Effects and Defects in Solids. Unidade: IFSC

    Subjects: ÓPTICA, MATERIAIS (PROPRIEDADES ELÉTRICAS), FÍSICA DA MATÉRIA CONDENSADA

    PrivadoAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SCALVI, Luis Vicente de Andrade et al. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, v. 156, n. 1-4, p. 145-149, 2001Tradução . . Disponível em: https://doi.org/10.1080/10420150108216886. Acesso em: 17 nov. 2025.
    • APA

      Scalvi, L. V. de A., Geraldo, V., Messias, F. R., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (2001). Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, 156( 1-4), 145-149. doi:10.1080/10420150108216886
    • NLM

      Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1080/10420150108216886
    • Vancouver

      Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1080/10420150108216886
  • Source: Radiation Effects and Defects in Solids. Unidade: IFSC

    Subjects: MATÉRIA CONDENSADA, MATÉRIA CONDENSADA (PROPRIEDADES ELÉTRICAS)

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      MESSIAS, Fábio Rogério et al. Oxygen related defects excitation and photoconductivity dependence of Sn'O IND.2'sol-gel films with several light sources. Radiation Effects and Defects in Solids, v. 150, p. 391-395, 1999Tradução . . Disponível em: https://doi.org/10.1080/10420159908226263. Acesso em: 17 nov. 2025.
    • APA

      Messias, F. R., Scalvi, L. V. de A., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (1999). Oxygen related defects excitation and photoconductivity dependence of Sn'O IND.2'sol-gel films with several light sources. Radiation Effects and Defects in Solids, 150, 391-395. doi:10.1080/10420159908226263
    • NLM

      Messias FR, Scalvi LV de A, Siu Li M, Santilli CV, Pulcinelli SH. Oxygen related defects excitation and photoconductivity dependence of Sn'O IND.2'sol-gel films with several light sources [Internet]. Radiation Effects and Defects in Solids. 1999 ;150 391-395.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1080/10420159908226263
    • Vancouver

      Messias FR, Scalvi LV de A, Siu Li M, Santilli CV, Pulcinelli SH. Oxygen related defects excitation and photoconductivity dependence of Sn'O IND.2'sol-gel films with several light sources [Internet]. Radiation Effects and Defects in Solids. 1999 ;150 391-395.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1080/10420159908226263

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