Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films (2001)
- Authors:
- Autor USP: LI, MAXIMO SIU - IFSC
- Unidade: IFSC
- DOI: 10.1080/10420150108216886
- Subjects: ÓPTICA; MATERIAIS (PROPRIEDADES ELÉTRICAS); FÍSICA DA MATÉRIA CONDENSADA
- Language: Inglês
- Imprenta:
- Publisher place: Switzerland
- Date published: 2001
- Source:
- Título: Radiation Effects and Defects in Solids
- ISSN: 1042-0150
- Volume/Número/Paginação/Ano: v.156, n.1-4, p.145-149, 2001
- Este periódico é de acesso aberto
- Este artigo NÃO é de acesso aberto
-
ABNT
SCALVI, Luis Vicente de Andrade et al. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, v. 156, n. 1-4, p. 145-149, 2001Tradução . . Disponível em: https://doi.org/10.1080/10420150108216886. Acesso em: 21 fev. 2026. -
APA
Scalvi, L. V. de A., Geraldo, V., Messias, F. R., Siu Li, M., Santilli, C. V., & Pulcinelli, S. H. (2001). Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films. Radiation Effects and Defects in Solids, 156( 1-4), 145-149. doi:10.1080/10420150108216886 -
NLM
Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2026 fev. 21 ] Available from: https://doi.org/10.1080/10420150108216886 -
Vancouver
Scalvi LV de A, Geraldo V, Messias FR, Siu Li M, Santilli CV, Pulcinelli SH. Contribution of oxygen related defects to the electronic transport in Sn'O IND.2' sol-gel films [Internet]. Radiation Effects and Defects in Solids. 2001 ;156( 1-4): 145-149.[citado 2026 fev. 21 ] Available from: https://doi.org/10.1080/10420150108216886 - pH influence on 'ZN'S structural and optical properties
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Informações sobre o DOI: 10.1080/10420150108216886 (Fonte: oaDOI API)
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