Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS' (1996)
Enderlein, R; Sipahi, Guilherme Matos 
; Scolfaro, L M R; Leite, J. R.; Dias, I E L
Source: Materials Science and Engineering B 35. Conference titles: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
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ENDERLEIN, R et al. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. 1996, Anais.. Cingapura: Elsevier, 1996. . Acesso em: 17 nov. 2025.APA
Enderlein, R., Sipahi, G. M., Scolfaro, L. M. R., Leite, J. R., & Dias, I. E. L. (1996). Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. In Materials Science and Engineering B 35. Cingapura: Elsevier.NLM
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2025 nov. 17 ]Vancouver
Enderlein R, Sipahi GM, Scolfaro LMR, Leite JR, Dias IEL. Comparative studies of photoluminescence from n- and p-'GAMA'-doping wells in 'GA''AS'. Materials Science and Engineering B 35. 1996 ;[citado 2025 nov. 17 ]
