PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors (2010)
Cavallari, Marco Roberto 
; Albertin, Katia Franklin ; Santos, Gerson dos; Ramos, Carlos Alberto Santos; Pereyra, Inés ; Fonseca, Fernando Josepetti ; Andrade, Adnei Melges de
Fonte: Journal of Integrated Circuits and Systems. Unidades: EP, IEE
Assuntos: TRANSISTORES, SEMICONDUTORES
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CAVALLARI, Marco Roberto et al. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, v. 5, n. 2, p. 116-124, 2010Tradução . . Acesso em: 15 nov. 2025.APA
Cavallari, M. R., Albertin, K. F., Santos, G. dos, Ramos, C. A. S., Pereyra, I., Fonseca, F. J., & Andrade, A. M. de. (2010). PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems, 5( 2), 116-124.NLM
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]Vancouver
Cavallari MR, Albertin KF, Santos G dos, Ramos CAS, Pereyra I, Fonseca FJ, Andrade AM de. PECVD silicon oxynitrite as insulator for MDMO-PPV thin-film transistors. Journal of Integrated Circuits and Systems. 2010 ;5( 2): 116-124.[citado 2025 nov. 15 ]
