Ibrahim, Ricardo Cury 
; Horiuchi, Toshihisa; Shiosaki, Tadashi; Matsushige, Kazumi
Fonte: Japanese Journal of Applied Physics. Unidade: EP
Assunto: FILMES FINOS (PROPRIEDADES ELÉTRICAS)
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ABNT
IBRAHIM, Ricardo Cury et al. Highly oriented Nb-doped lead titanate thin films by reactive sputtering: electrical properties. Japanese Journal of Applied Physics, v. No 1998, n. 11, p. 6060-6064, 1998Tradução . . Disponível em: https://doi.org/10.1143/JJAP.37.6060. Acesso em: 17 nov. 2025.APA
Ibrahim, R. C., Horiuchi, T., Shiosaki, T., & Matsushige, K. (1998). Highly oriented Nb-doped lead titanate thin films by reactive sputtering: electrical properties. Japanese Journal of Applied Physics, No 1998( 11), 6060-6064. doi:10.1143/JJAP.37.6060NLM
Ibrahim RC, Horiuchi T, Shiosaki T, Matsushige K. Highly oriented Nb-doped lead titanate thin films by reactive sputtering: electrical properties [Internet]. Japanese Journal of Applied Physics. 1998 ; No 1998( 11): 6060-6064.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1143/JJAP.37.6060Vancouver
Ibrahim RC, Horiuchi T, Shiosaki T, Matsushige K. Highly oriented Nb-doped lead titanate thin films by reactive sputtering: electrical properties [Internet]. Japanese Journal of Applied Physics. 1998 ; No 1998( 11): 6060-6064.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1143/JJAP.37.6060
