Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source (2016)
Neves, Felipe S; Agopian, Paula Ghedini Der 
; Cretu, B; Rooyackers, Rita; Vandooren, A; Simoen, Eddy ; Thean, Aaron; Martino, João Antonio
Fonte: IEEE Transactions on Electron Devices. Unidade: EP
Assunto: SEMICONDUTORES
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ABNT
NEVES, Felipe S et al. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, v. 63, n. 4, p. 1658-1665, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2533360. Acesso em: 17 nov. 2025.APA
Neves, F. S., Agopian, P. G. D., Cretu, B., Rooyackers, R., Vandooren, A., Simoen, E., et al. (2016). Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source. IEEE Transactions on Electron Devices, 63( 4), 1658-1665. doi:10.1109/ted.2016.2533360NLM
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2533360Vancouver
Neves FS, Agopian PGD, Cretu B, Rooyackers R, Vandooren A, Simoen E, Thean A, Martino JA. Low-Frequency Noise Analysis and Modeling in Vertical Tunnel FETs With Ge Source [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 4): 1658-1665.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2533360
