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Artigo de periodico
Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes (2016)
Oliveira, Alberto Vinicius de; Simoen, Eddy ; Mitard Jerome; Agopian, Paula Ghedini Der ; Langer, Robert; Witters, Liesbeth J; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OLIVEIRA, Alberto Vinicius de et al. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, v. 63, n. 10, p. 4031-4037, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2598288. Acesso em: 17 nov. 2025.
APA
Oliveira, A. V. de, Simoen, E., Mitard Jerome,, Agopian, P. G. D., Langer, R., Witters, L. J., & Martino, J. A. (2016). Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes. IEEE Transactions on Electron Devices, 63( 10), 4031-4037. doi:10.1109/ted.2016.2598288
NLM
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Vancouver
Oliveira AV de, Simoen E, Mitard Jerome, Agopian PGD, Langer R, Witters LJ, Martino JA. Low-Frequency Noise Assessment of Different Ge pFinFET STI Processes [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 10): 4031-4037.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2598288
Artigo de periodico
Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective (2016)
Bordallo, Caio Cesar Mendes ; Claeys, Cor ; Thean, Aaron; Simoen, Eddy ; Vandooren, A; Rooyackers, Rita; Agopian, Paula Ghedini Der ; Sivieri, Victor de Bodt; Martino, João Antonio
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: TRANSISTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BORDALLO, Caio Cesar Mendes et al. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, v. 63, n. 7, p. 2930-2935, 2016Tradução . . Disponível em: https://doi.org/10.1109/ted.2016.2559580. Acesso em: 17 nov. 2025.
APA
Bordallo, C. C. M., Claeys, C., Thean, A., Simoen, E., Vandooren, A., Rooyackers, R., et al. (2016). Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective. IEEE Transactions on Electron Devices, 63( 7), 2930-2935. doi:10.1109/ted.2016.2559580
NLM
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Vancouver
Bordallo CCM, Claeys C, Thean A, Simoen E, Vandooren A, Rooyackers R, Agopian PGD, Sivieri V de B, Martino JA. Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective [Internet]. IEEE Transactions on Electron Devices. 2016 ; 63( 7): 2930-2935.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2016.2559580
Artigo de periodico
Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs (2015)
Agopian, Paula Ghedini Der ; Martino, João Antonio ; Santos, Sara Dereste dos; Rooyackers, Rita; Vandoren, A
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: MICROELETRÔNICA, TRANSISTORES, SILÍCIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
AGOPIAN, Paula Ghedini Der et al. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, v. 62, n. Ja 2015, p. 16-22, 2015Tradução . . Disponível em: https://doi.org/10.1109/ted.2014.2367659. Acesso em: 17 nov. 2025.
APA
Agopian, P. G. D., Martino, J. A., Santos, S. D. dos, Rooyackers, R., & Vandoren, A. (2015). Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs. IEEE Transactions on Electron Devices, 62( Ja 2015), 16-22. doi:10.1109/ted.2014.2367659
NLM
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Vancouver
Agopian PGD, Martino JA, Santos SD dos, Rooyackers R, Vandoren A. Influence of the Source Composition on the Analog Performance Parameters of Vertical Nanowire-TFETs [Internet]. IEEE Transactions on Electron Devices. 2015 ; 62( Ja 2015): 16-22.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2014.2367659
Artigo de periodico
On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs (2013)
Santos, Sara Dereste dos; Nicoletti, Talitha; Martino, João Antonio ; Aoulaiche, Marc; Veloso, Anabela; Jurczak, Malgorzata; Simoen, Eddy ; Claeys, Cor
Source: IEEE Transactions on Electron Devices. Unidade: EP
Subjects: SILÍCIO, FILMES FINOS, AVALIAÇÃO DE DESEMPENHO, TRANSISTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANTOS, Sara Dereste dos et al. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, v. 60, n. 1, p. 444-450, 2013Tradução . . Disponível em: https://doi.org/10.1109/ted.2012.2227749. Acesso em: 17 nov. 2025.
APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Aoulaiche, M., Veloso, A., Jurczak, M., et al. (2013). On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs. IEEE Transactions on Electron Devices, 60( 1), 444-450. doi:10.1109/ted.2012.2227749
NLM
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2012.2227749
Vancouver
Santos SD dos, Nicoletti T, Martino JA, Aoulaiche M, Veloso A, Jurczak M, Simoen E, Claeys C. On the Variability of the Front-/Back-Channel LF Noise in UTBOX SOI nMOSFETs [Internet]. IEEE Transactions on Electron Devices. 2013 ; 60( 1): 444-450.[citado 2025 nov. 17 ] Available from: https://doi.org/10.1109/ted.2012.2227749

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