Titanium silicide formation and arsenic dopant behavior under rtp in vacuum (1988)
Furlan, Rogério 
; Swart, Jacobus Willibrordus
Source: Extended Abstracts. Conference titles: Eletrochemical Society Technical Meeting. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
FURLAN, Rogério e SWART, Jacobus Willibrordus. Titanium silicide formation and arsenic dopant behavior under rtp in vacuum. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 27 nov. 2025. , 1988APA
Furlan, R., & Swart, J. W. (1988). Titanium silicide formation and arsenic dopant behavior under rtp in vacuum. Extended Abstracts. Pennington: Escola Politécnica, Universidade de São Paulo.NLM
Furlan R, Swart JW. Titanium silicide formation and arsenic dopant behavior under rtp in vacuum. Extended Abstracts. 1988 ;88( 2 ): 377-8.[citado 2025 nov. 27 ]Vancouver
Furlan R, Swart JW. Titanium silicide formation and arsenic dopant behavior under rtp in vacuum. Extended Abstracts. 1988 ;88( 2 ): 377-8.[citado 2025 nov. 27 ]
