In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films (2003)
Source: Microelectronic Technology and Devices SBMicro 2003. Unidade: EP
Assunto: MICROELETRÔNICA
ABNT
OLIVEIRA, Alessandro Ricardo de e PAEZ CARREÑO, Marcelo Nelson. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 17 nov. 2025.APA
Oliveira, A. R. de, & Paez Carreño, M. N. (2003). In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 17 ]Vancouver
Oliveira AR de, Paez Carreño MN. In-situ and ion implantation nitrogen doping on near stoichiometric a-SiC:H films. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 17 ]

