Self-sustained bridges of a-SiC:H obtained by PECVD technique (2003)
Paez Carreño, Marcelo Nelson 
; Lopes, Alexandre Tavares
Fonte: Microelectronic Technology and Devices SBMicro 2003. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
PAEZ CARREÑO, Marcelo Nelson e LOPES, Alexandre Tavares. Self-sustained bridges of a-SiC:H obtained by PECVD technique. Microelectronic Technology and Devices SBMicro 2003. Tradução . Pennington: Electrochemical Society, 2003. . . Acesso em: 16 nov. 2025.APA
Paez Carreño, M. N., & Lopes, A. T. (2003). Self-sustained bridges of a-SiC:H obtained by PECVD technique. In Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society.NLM
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]Vancouver
Paez Carreño MN, Lopes AT. Self-sustained bridges of a-SiC:H obtained by PECVD technique. In: Microelectronic Technology and Devices SBMicro 2003. Pennington: Electrochemical Society; 2003. [citado 2025 nov. 16 ]
