Characterization of thin MOS gate oxides grown in pyrogenic environment (2004)
Fonte: Microelectronics technology and devices SBMicro 2004.. Nome do evento: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assuntos: MICROELETRÔNICA, FILMES FINOS, CIRCUITOS INTEGRADOS MOS
ABNT
NOGUEIRA, Willian Aurélio e SANTOS FILHO, Sebastião Gomes dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. 2004, Anais.. Pennington: The Electrochemical Society, 2004. . Acesso em: 16 nov. 2025.APA
Nogueira, W. A., & Santos Filho, S. G. dos. (2004). Characterization of thin MOS gate oxides grown in pyrogenic environment. In Microelectronics technology and devices SBMicro 2004.. Pennington: The Electrochemical Society.NLM
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]Vancouver
Nogueira WA, Santos Filho SG dos. Characterization of thin MOS gate oxides grown in pyrogenic environment. Microelectronics technology and devices SBMicro 2004. 2004 ;[citado 2025 nov. 16 ]

