Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body (2002)
Pavanello, Marcelo Antonio 
; Martino, João Antonio ; Mercha, A.; Rafi, J.M.; Simoen, Eddy ; Claeys, Cor ; Van Meer, H.; De Meyer, K.
Fonte: Journal de Physique IV. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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ABNT
PAVANELLO, Marcelo Antonio et al. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, v. 12, n. 3, 2002Tradução . . Acesso em: 17 nov. 2025.APA
Pavanello, M. A., Martino, J. A., Mercha, A., Rafi, J. M., Simoen, E., Claeys, C., et al. (2002). Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV, 12( 3).NLM
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 17 ]Vancouver
Pavanello MA, Martino JA, Mercha A, Rafi JM, Simoen E, Claeys C, Van Meer H, De Meyer K. Low temperature operation of 0.13 µm partially-depleted SOI nMOSFETs with floating body. Journal de Physique IV. 2002 ;12( 3):[citado 2025 nov. 17 ]
