Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K (1996)
Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Fonte: Journal de Physique IV Colloque 3, supplement au Journal de Physique III. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS MOS
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NICOLETT, Aparecido Sirley et al. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, v. 6, 1996Tradução . . Acesso em: 16 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1996). Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III, 6.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Mobility degradation influence on the SOI MOSFET channel length extraction at 77 K. Journal de Physique IV Colloque 3, supplement au Journal de Physique III. 1996 ;6[citado 2025 nov. 16 ]
