Pavanello, Marcelo Antonio 
; Martino, João Antonio
Fonte: Electrochemical Society Proceedings. Nome do evento: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: ELETROQUÍMICA
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ABNT
PAVANELLO, Marcelo Antonio e MARTINO, João Antonio. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperatures. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo. . Acesso em: 16 nov. 2025. , 1999APA
Pavanello, M. A., & Martino, J. A. (1999). Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperatures. Electrochemical Society Proceedings. Pennington: Escola Politécnica, Universidade de São Paulo.NLM
Pavanello MA, Martino JA. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperatures. Electrochemical Society Proceedings. 1999 ; 99-3 201-206.[citado 2025 nov. 16 ]Vancouver
Pavanello MA, Martino JA. Extraction of the oxide charges at the buried oxide/silicon substrate interface in accumulation-mode SOI pMOSFET's at low temperatures. Electrochemical Society Proceedings. 1999 ; 99-3 201-206.[citado 2025 nov. 16 ]
