Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs (1996)
Simoen, Eddy 
; Claeys, Cor ; Lukyanchikova, N; Petrichuk, M; Garbar, N; Martino, João Antonio ; Sonnenberg, Victor
Source: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Subjects: MICROELETRÔNICA, ELETROQUÍMICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Tradução . Pennington: The Electrochemical Society, 1996. . . Acesso em: 16 nov. 2025.APA
Simoen, E., Claeys, C., Lukyanchikova, N., Petrichuk, M., Garbar, N., Martino, J. A., & Sonnenberg, V. (1996). Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society.NLM
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2025 nov. 16 ]Vancouver
Simoen E, Claeys C, Lukyanchikova N, Petrichuk M, Garbar N, Martino JA, Sonnenberg V. Extraction of the interface and oxide charge density in silicon-on-insulator MOSFETs. In: Seventh International Symposium on Silicon-on-Insulator Technology and Devices: proceedings. Pennington: The Electrochemical Society; 1996. [citado 2025 nov. 16 ]
