Bellodi, Marcello; Iniguez, Benjamin; Flandre, Denis 
; Martino, João Antonio
Source: Proceedings. Conference titles: International Symposium on Silicon-on-Insulator Technology and Devices. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
BELLODI, Marcello et al. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. 2001, Anais.. Pennington: The Electrochemical Society, 2001. . Acesso em: 16 nov. 2025.APA
Bellodi, M., Iniguez, B., Flandre, D., & Martino, J. A. (2001). Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. In Proceedings. Pennington: The Electrochemical Society.NLM
Bellodi M, Iniguez B, Flandre D, Martino JA. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. Proceedings. 2001 ;[citado 2025 nov. 16 ]Vancouver
Bellodi M, Iniguez B, Flandre D, Martino JA. Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications. Proceedings. 2001 ;[citado 2025 nov. 16 ]
