Gimenez, Salvador Pinillos 
; Pavanello, Marcelo Antonio ; Martino, João Antonio ; Flandre, Denis
Source: Microelectronics Technology and Devices SBMICRO 2005. Conference titles: International Symposium on Microelectronics Technology and Devices SBMICRO. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
GIMENEZ, Salvador Pinillos et al. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. 2005, Anais.. Pennington: The Electrochemical Society, 2005. . Acesso em: 16 nov. 2025.APA
Gimenez, S. P., Pavanello, M. A., Martino, J. A., & Flandre, D. (2005). Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. In Microelectronics Technology and Devices SBMICRO 2005. Pennington: The Electrochemical Society.NLM
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]Vancouver
Gimenez SP, Pavanello MA, Martino JA, Flandre D. Potential of improved gain in operational transconductance amplifier using 0,5 Mm graded-channel SOI nMOSFET for applications in the gigahertz range. Microelectronics Technology and Devices SBMICRO 2005. 2005 ;[citado 2025 nov. 16 ]
