A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K (2000)
Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Fonte: Proceedings. Nome do evento: IEEE International Conference on Devices, Circuits and Syems. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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NICOLETT, Aparecido Sirley et al. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. 2000, Anais.. Piscataway: IEEE, 2000. . Acesso em: 15 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (2000). A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. In Proceedings. Piscataway: IEEE.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2025 nov. 15 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. A new method to extract the LDD doping concentration on fully depleted SOI nMOSFET at 300 K. Proceedings. 2000 ;[citado 2025 nov. 15 ]
