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Filtros : "Materials Science and Engineering B" "IF-FEP" Limpar

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Trabalho de evento-resumo periodico
Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells (1995)
Tabata, A; Ceschin, A M; Quivy, A. A.; Levine, Alexandre ; Leite, J. R.; Enderlein, R; Oliveira, J. B. B.; Laureto, E; Goncalves, J L
Fonte: Materials Science and Engineering B. Nome do evento: International Conference on Low Dimensional Structures and Devices. Unidade: IF
Assunto: MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TABATA, A et al. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo. . Acesso em: 15 nov. 2025. , 1995
APA
Tabata, A., Ceschin, A. M., Quivy, A. A., Levine, A., Leite, J. R., Enderlein, R., et al. (1995). Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. Cingapura: Instituto de Física, Universidade de São Paulo.
NLM
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 15 ]
Vancouver
Tabata A, Ceschin AM, Quivy AA, Levine A, Leite JR, Enderlein R, Oliveira JBB, Laureto E, Goncalves JL. Investigation of the photoluminescence linewidth broadening in symmetric and asymmetric in 'GA''AS' / 'GA''AS' n-type 'GAMA'-doped quantum wells. Materials Science and Engineering B. 1995 ;35 401-5.[citado 2025 nov. 15 ]
Artigo de periodico
Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy (1989)
Stojanoff, Vivian; Shahid, M A; Mcdevitt, T L; Mahajan, S; Schlesinger, T E; Bonner, W A
Fonte: Materials Science and Engineering B. Unidade: IF
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
STOJANOFF, Vivian et al. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy. Materials Science and Engineering B, v. 3 , n. 3 , p. 279-85, 1989Tradução . . Disponível em: https://doi.org/10.1016/0921-5107(89)90022-6. Acesso em: 15 nov. 2025.
APA
Stojanoff, V., Shahid, M. A., Mcdevitt, T. L., Mahajan, S., Schlesinger, T. E., & Bonner, W. A. (1989). Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy. Materials Science and Engineering B, 3 ( 3 ), 279-85. doi:10.1016/0921-5107(89)90022-6
NLM
Stojanoff V, Shahid MA, Mcdevitt TL, Mahajan S, Schlesinger TE, Bonner WA. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy [Internet]. Materials Science and Engineering B. 1989 ;3 ( 3 ): 279-85.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0921-5107(89)90022-6
Vancouver
Stojanoff V, Shahid MA, Mcdevitt TL, Mahajan S, Schlesinger TE, Bonner WA. Influence of growth conditions on properties of inp homoepitaxial layers grown by liquid phase epitaxy [Internet]. Materials Science and Engineering B. 1989 ;3 ( 3 ): 279-85.[citado 2025 nov. 15 ] Available from: https://doi.org/10.1016/0921-5107(89)90022-6

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