Fonte: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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BRAGA, Nelson Liebentritt de Almeida e ZASNICOFF, Luiz Sergio. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 1-6, 1996Tradução . . Acesso em: 16 nov. 2025.APA
Braga, N. L. de A., & Zasnicoff, L. S. (1996). Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 1-6.NLM
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2025 nov. 16 ]Vancouver
Braga NL de A, Zasnicoff LS. Quantitative analysis of as enhanced diffusion along interfacial misfit dislocations in Si/Si(Ge) heterostructures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 1-6.[citado 2025 nov. 16 ]
