Nicolett, Aparecido Sirley; Martino, João Antonio 
; Simoen, Eddy ; Claeys, Cor
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 1-4, 1997Tradução . . Acesso em: 16 nov. 2025.APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1997). Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, 5( 1), 1-4.NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 nov. 16 ]Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2025 nov. 16 ]
