Excitons trapped at impurity centers in semiconductors (1987)
Source: Abstracts. Conference titles: Escola Brasileira de Física de Semicondutores. Unidade: IFQSC
Assunto: FÍSICA
ABNT
HORNOS, José Eduardo Martinho e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Excitons trapped at impurity centers in semiconductors. 1987, Anais.. Campinas: , Universidade de São Paulo, 1987. Disponível em: https://repositorio.usp.br/directbitstream/1019027a-2b52-4268-aed9-9635456254e2/PROD000343_2282152.pdf. Acesso em: 12 dez. 2025.APA
Hornos, J. E. M., Degani, M. H., & Hipólito, O. (1987). Excitons trapped at impurity centers in semiconductors. In Abstracts. Campinas: , Universidade de São Paulo. Recuperado de https://repositorio.usp.br/directbitstream/1019027a-2b52-4268-aed9-9635456254e2/PROD000343_2282152.pdfNLM
Hornos JEM, Degani MH, Hipólito O. Excitons trapped at impurity centers in semiconductors [Internet]. Abstracts. 1987 ;[citado 2025 dez. 12 ] Available from: https://repositorio.usp.br/directbitstream/1019027a-2b52-4268-aed9-9635456254e2/PROD000343_2282152.pdfVancouver
Hornos JEM, Degani MH, Hipólito O. Excitons trapped at impurity centers in semiconductors [Internet]. Abstracts. 1987 ;[citado 2025 dez. 12 ] Available from: https://repositorio.usp.br/directbitstream/1019027a-2b52-4268-aed9-9635456254e2/PROD000343_2282152.pdf