Excitons trapped at impurity centers in semiconductors (1987)
- Authors:
- USP affiliated authors: HORNOS, JOSE EDUARDO MARTINHO - IFQSC ; DEGANI, MARCOS HENRIQUE - IFQSC ; HIPOLITO, OSCAR - IFQSC
- Unidade: IFQSC
- Assunto: FÍSICA
- Language: Inglês
- Imprenta:
- Source:
- Título do periódico: Abstracts
- Conference titles: Escola Brasileira de Física de Semicondutores
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ABNT
HORNOS, José Eduardo Martinho e DEGANI, Marcos Henrique e HIPÓLITO, Oscar. Excitons trapped at impurity centers in semiconductors. 1987, Anais.. Campinas: , Universidade de São Paulo, 1987. . Acesso em: 19 abr. 2024. -
APA
Hornos, J. E. M., Degani, M. H., & Hipólito, O. (1987). Excitons trapped at impurity centers in semiconductors. In Abstracts. Campinas: , Universidade de São Paulo. -
NLM
Hornos JEM, Degani MH, Hipólito O. Excitons trapped at impurity centers in semiconductors. Abstracts. 1987 ;[citado 2024 abr. 19 ] -
Vancouver
Hornos JEM, Degani MH, Hipólito O. Excitons trapped at impurity centers in semiconductors. Abstracts. 1987 ;[citado 2024 abr. 19 ] - Excitons trapped in impurities: the bounded-unbounded phase transition
- Electron-phonon effects on the ground impurity level in quasi-one-dimensional semiconductor heterostructures
- Excitation binding energy in 'GA''AS' - 'GA IND.1-X''AL IND.X' as quantum wells
- Exchange and correlations effects in a semiconductor quantum-well wire
- Temperature dependence of the polaron mass in a 'GA''AS'-'GA IND.1-X''AL IND.X''AS' quantum-well wire
- Impurity-shifted polaron energy in semimagnetic 'CD IND.1-X''MN IND.X' 'TE'-'CD''TE' quantum wells (pt.Ii)
- Modification of the electron-phonon interactions in gaas-gaalas heterojunctions
- Cyclotron resonance of interface polarons in semiconductor heterostructures
- The polaronic state of a multi-electron dimple on the liquid helium film
- Polaron effects on excitons in GaAs-'Ga IND.1-x''Al IND.X'As quantum wells
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