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  • Source: Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. Unidade: EESC

    Subjects: TORNEAMENTO, DIAMANTE, MUDANÇA DE FASE, CRISTALOGRAFIA

    Acesso à fonteDOIHow to cite
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    • ABNT

      JASINEVICIUS, Renato Goulart et al. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, v. 226, n. 3, p. 445-458, 2012Tradução . . Disponível em: https://doi.org/10.1177/0954405411421108. Acesso em: 17 out. 2024.
    • APA

      Jasinevicius, R. G., Duduch, J. G., Montanari, L., & Pizani, P. S. (2012). Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture, 226( 3), 445-458. doi:10.1177/0954405411421108
    • NLM

      Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 out. 17 ] Available from: https://doi.org/10.1177/0954405411421108
    • Vancouver

      Jasinevicius RG, Duduch JG, Montanari L, Pizani PS. Dependence of brittle-to-ductile transition on crystallographic direction in diamond turning of single-crystal silicon [Internet]. Proceedings of Institution of Mechanical Engineers. Part B. Journal of Engineering Manufacture. 2012 ; 226( 3): 445-458.[citado 2024 out. 17 ] Available from: https://doi.org/10.1177/0954405411421108
  • Source: Physica Status Solidi B : basic research. Unidade: EESC

    Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE

    Acesso à fonteDOIHow to cite
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    • ABNT

      JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 17 out. 2024.
    • APA

      Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
    • NLM

      Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 17 ] Available from: https://doi.org/10.1002/pssb.200672554
    • Vancouver

      Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 out. 17 ] Available from: https://doi.org/10.1002/pssb.200672554
  • Source: Proceedings of the COBEM 2005. Conference titles: International Congress of Mechanical Engineering. Unidade: EESC

    Subjects: MUDANÇA DE FASE, DIAMANTE, FERRAMENTAS, ENGENHARIA MECÂNICA

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    • ABNT

      JASINEVICIUS, Renato Goulart e PIZANI, P. S. High pressure phase transformation in single crystal silicon during ductile regime diamond turning. 2005, Anais.. Rio de Janeiro, RJ: ABCM, 2005. Disponível em: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf. Acesso em: 17 out. 2024.
    • APA

      Jasinevicius, R. G., & Pizani, P. S. (2005). High pressure phase transformation in single crystal silicon during ductile regime diamond turning. In Proceedings of the COBEM 2005. Rio de Janeiro, RJ: ABCM. Recuperado de http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf
    • NLM

      Jasinevicius RG, Pizani PS. High pressure phase transformation in single crystal silicon during ductile regime diamond turning [Internet]. Proceedings of the COBEM 2005. 2005 ;[citado 2024 out. 17 ] Available from: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf
    • Vancouver

      Jasinevicius RG, Pizani PS. High pressure phase transformation in single crystal silicon during ductile regime diamond turning [Internet]. Proceedings of the COBEM 2005. 2005 ;[citado 2024 out. 17 ] Available from: http://www.abcm.org.br/anais/cobem/2005/PDF/COBEM2005-1560.pdf

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