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Artigo de periodico
Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping (2024)
Ipaves, Bruno ; Justo Filho, João Francisco ; Sanyal, Biplab ; Assali, Lucy Vitoria Credidio
Source: Applied Electronic Materials. Unidades: IF, EP
Subjects: CARBONO, ESTRUTURA QUÍMICA, CONDUTIVIDADE ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
IPAVES, Bruno et al. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping. Applied Electronic Materials, v. 6, n. 1, p. 386–393, 2024Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf. Acesso em: 03 ago. 2024.
APA
Ipaves, B., Justo Filho, J. F., Sanyal, B., & Assali, L. V. C. (2024). Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping. Applied Electronic Materials, 6( 1), 386–393. doi:10.1021/acsaelm.3c01398
NLM
Ipaves B, Justo Filho JF, Sanyal B, Assali LVC. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping [Internet]. Applied Electronic Materials. 2024 ; 6( 1): 386–393.[citado 2024 ago. 03 ] Available from: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf
Vancouver
Ipaves B, Justo Filho JF, Sanyal B, Assali LVC. Tuning the electronic and mechanical properties of two-dimensional diamond through N and B doping [Internet]. Applied Electronic Materials. 2024 ; 6( 1): 386–393.[citado 2024 ago. 03 ] Available from: https://repositorio.usp.br/directbitstream/84c80d10-b7cf-4e3a-8d14-8f4b797a015f/Tuning%20the%20Electronic%20and%20Mechanical%20Properties%20of%20Two-Dimensional%20Diamond%20through%20N%20and%20B%20Doping.pdf
Artigo de periodico
Modeling and design of a partially air-filled slow wave substrate integrated waveguide (2023)
Corsi, Jordan; Rehder, Gustavo Pamplona ; Ferrari, Philippe; Serrano, Ariana Maria da Conceição Lacorte Caniato ; Pistono, Emmanuel
Source: IEEE Transactions on Microwave Theory and Techniques. Unidade: EP
Subjects: MATERIAIS NANOESTRUTURADOS, ONDAS ELETROMAGNÉTICAS, CONDUTIVIDADE ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CORSI, Jordan et al. Modeling and design of a partially air-filled slow wave substrate integrated waveguide. IEEE Transactions on Microwave Theory and Techniques, v. 71, n. 2, p. 750-762, 2023Tradução . . Disponível em: https://doi.org/10.1109/TMTT.2022.3206438. Acesso em: 03 ago. 2024.
APA
Corsi, J., Rehder, G. P., Ferrari, P., Serrano, A. M. da C. L. C., & Pistono, E. (2023). Modeling and design of a partially air-filled slow wave substrate integrated waveguide. IEEE Transactions on Microwave Theory and Techniques, 71( 2), 750-762. doi:10.1109/TMTT.2022.3206438
NLM
Corsi J, Rehder GP, Ferrari P, Serrano AM da CLC, Pistono E. Modeling and design of a partially air-filled slow wave substrate integrated waveguide [Internet]. IEEE Transactions on Microwave Theory and Techniques. 2023 ; 71( 2): 750-762.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1109/TMTT.2022.3206438
Vancouver
Corsi J, Rehder GP, Ferrari P, Serrano AM da CLC, Pistono E. Modeling and design of a partially air-filled slow wave substrate integrated waveguide [Internet]. IEEE Transactions on Microwave Theory and Techniques. 2023 ; 71( 2): 750-762.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1109/TMTT.2022.3206438
Artigo de periodico
Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data (2022)
Toledo, Rodrigo do Nascimento; Silva, Wenita de Lima; Gonçalez Filho, Walter; Nogueira, Alexandro de Moraes; Martino, João Antonio ; Agopian, Paula Ghedini Der
Source: Solid State Electronics. Unidade: EP
Subjects: TRANSISTORES, CONDUTIVIDADE ELÉTRICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TOLEDO, Rodrigo do Nascimento et al. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, v. 194, p. 1-4, 2022Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2022.108328. Acesso em: 03 ago. 2024.
APA
Toledo, R. do N., Silva, W. de L., Gonçalez Filho, W., Nogueira, A. de M., Martino, J. A., & Agopian, P. G. D. (2022). Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data. Solid State Electronics, 194, 1-4. doi:10.1016/j.sse.2022.108328
NLM
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Vancouver
Toledo R do N, Silva W de L, Gonçalez Filho W, Nogueira A de M, Martino JA, Agopian PGD. Comparison between low-dropout voltage regulators designed with line and nanowire tunnel field effect transistors using experimental data [Internet]. Solid State Electronics. 2022 ; 194 1-4.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1016/j.sse.2022.108328
Artigo de periodico
White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9-vinylcarbazole) (2019)
Oide, Mariane Yuka Tsubaki ; Onmori, Roberto Koji ; Oppenheim, Ivette Frida Cymbaum; Wang, Shu Hui
Source: Chemistry Select. Unidade: EP
Subjects: NANOPARTÍCULAS, CONDUTIVIDADE ELÉTRICA, ZINCO, ALUMÍNIO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
OIDE, Mariane Yuka Tsubaki et al. White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9-vinylcarbazole). Chemistry Select, v. 4, p. 12424-12427, 2019Tradução . . Disponível em: https://doi.org/10.1002/slct.201902559. Acesso em: 03 ago. 2024.
APA
Oide, M. Y. T., Onmori, R. K., Oppenheim, I. F. C., & Wang, S. H. (2019). White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9-vinylcarbazole). Chemistry Select, 4, 12424-12427. doi:10.1002/slct.201902559
NLM
Oide MYT, Onmori RK, Oppenheim IFC, Wang SH. White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9-vinylcarbazole) [Internet]. Chemistry Select. 2019 ; 4 12424-12427.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1002/slct.201902559
Vancouver
Oide MYT, Onmori RK, Oppenheim IFC, Wang SH. White Electroluminescence from Aluminum Zinc Oxide Embedded in Poly(9-vinylcarbazole) [Internet]. Chemistry Select. 2019 ; 4 12424-12427.[citado 2024 ago. 03 ] Available from: https://doi.org/10.1002/slct.201902559

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