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Parte de monografia/livro
`ANTPOT.2´F`IND.5/2´ manifold splitting of `Ce POT.3+´ in PbCeX (X= Te, Se, S): a magnetic susceptibility study (2012)
Gratens, X; Isber, S; Charar, S; Golacki, Z
Source: Solid State Phenomena. Unidade: IF
Subjects: SEMICONDUTORES, RESSONÂNCIA PARAMAGNÉTICA ELETRÔNICA
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ABNT
GRATENS, X et al. `ANTPOT.2´F`IND.5/2´ manifold splitting of `Ce POT.3+´ in PbCeX (X= Te, Se, S): a magnetic susceptibility study. Solid State Phenomena. Tradução . Durnten-Zurich: Transn Tech Publishing, 2012. v. 190. p. 545-549. Disponível em: http://www.scientific.net/SSP.190.54. Acesso em: 12 out. 2024.
APA
Gratens, X., Isber, S., Charar, S., & Golacki, Z. (2012). `ANTPOT.2´F`IND.5/2´ manifold splitting of `Ce POT.3+´ in PbCeX (X= Te, Se, S): a magnetic susceptibility study. In Solid State Phenomena (Vol. 190, p. 545-549). Durnten-Zurich: Transn Tech Publishing. Recuperado de http://www.scientific.net/SSP.190.54
NLM
Gratens X, Isber S, Charar S, Golacki Z. `ANTPOT.2´F`IND.5/2´ manifold splitting of `Ce POT.3+´ in PbCeX (X= Te, Se, S): a magnetic susceptibility study [Internet]. In: Solid State Phenomena. Durnten-Zurich: Transn Tech Publishing; 2012. p. 545-549.[citado 2024 out. 12 ] Available from: http://www.scientific.net/SSP.190.54
Vancouver
Gratens X, Isber S, Charar S, Golacki Z. `ANTPOT.2´F`IND.5/2´ manifold splitting of `Ce POT.3+´ in PbCeX (X= Te, Se, S): a magnetic susceptibility study [Internet]. In: Solid State Phenomena. Durnten-Zurich: Transn Tech Publishing; 2012. p. 545-549.[citado 2024 out. 12 ] Available from: http://www.scientific.net/SSP.190.54
Artigo de periodico
Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors (2007)
Justo Filho, João Francisco ; Machado, Wanda Valle Marcondes; Assali, L. V. C.
Source: Diamond and Related Materials. Unidades: EP, IF
Subjects: SEMICONDUTORES, ÓPTICA, ESTRUTURA ELETRÔNICA
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ABNT
JUSTO FILHO, João Francisco e MACHADO, Wanda Valle Marcondes e ASSALI, L. V. C. Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors. Diamond and Related Materials, v. 16, n. 4-7, p. 1429-1432, 2007Tradução . . Disponível em: https://doi.org/10.1016/j.diamond.2006.10.005. Acesso em: 12 out. 2024.
APA
Justo Filho, J. F., Machado, W. V. M., & Assali, L. V. C. (2007). Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors. Diamond and Related Materials, 16( 4-7), 1429-1432. doi:10.1016/j.diamond.2006.10.005
NLM
Justo Filho JF, Machado WVM, Assali LVC. Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors [Internet]. Diamond and Related Materials. 2007 ; 16( 4-7): 1429-1432.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.diamond.2006.10.005
Vancouver
Justo Filho JF, Machado WVM, Assali LVC. Electronic and magnetic properties of Mn and Fe impurities in III-nitride semiconductors [Internet]. Diamond and Related Materials. 2007 ; 16( 4-7): 1429-1432.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.diamond.2006.10.005
Artigo de periodico
Cobalt in diamond: an ab initio investigation (2007)
Assali, L. V. C. ; Machado, Wanda Valle Marcondes; Larico, R; Justo Filho, João Francisco
Source: Diamond and Related Materials. Unidades: IF, EP
Subjects: SEMICONDUTORES, ÓPTICA, ESTRUTURA ELETRÔNICA
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ABNT
ASSALI, L. V. C. et al. Cobalt in diamond: an ab initio investigation. Diamond and Related Materials, v. 16, n. 4-7, p. 819-822, 2007Tradução . . Disponível em: https://doi.org/10.1016/j.diamond.2006.09.014. Acesso em: 12 out. 2024.
APA
Assali, L. V. C., Machado, W. V. M., Larico, R., & Justo Filho, J. F. (2007). Cobalt in diamond: an ab initio investigation. Diamond and Related Materials, 16( 4-7), 819-822. doi:10.1016/j.diamond.2006.09.014
NLM
Assali LVC, Machado WVM, Larico R, Justo Filho JF. Cobalt in diamond: an ab initio investigation [Internet]. Diamond and Related Materials. 2007 ; 16( 4-7): 819-822.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.diamond.2006.09.014
Vancouver
Assali LVC, Machado WVM, Larico R, Justo Filho JF. Cobalt in diamond: an ab initio investigation [Internet]. Diamond and Related Materials. 2007 ; 16( 4-7): 819-822.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/j.diamond.2006.09.014
Artigo de periodico
Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications (2005)
Freitas, Marcelo B; Medeiros, F H M; Yoshimura, Elisabeth Mateus
Source: Cross-Disciplinary Applied Research in Materials Science and Technololy Materials Science Forum. Unidade: IF
Subjects: ESPECTROSCOPIA DE RAIO X, RADIAÇÃO IONIZANTE, DOSAGEM DE RADIAÇÃO, SEMICONDUTORES
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ABNT
FREITAS, Marcelo B e MEDEIROS, F H M e YOSHIMURA, Elisabeth Mateus. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. Cross-Disciplinary Applied Research in Materials Science and Technololy Materials Science Forum, v. 480-481, p. 53-58, 2005Tradução . . Disponível em: https://repositorio.usp.br/directbitstream/7e67de98-9b5a-43e1-9059-b268565bad79/Freitas_and_Yoshimura_MSF_2005.pdf. Acesso em: 12 out. 2024.
APA
Freitas, M. B., Medeiros, F. H. M., & Yoshimura, E. M. (2005). Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications. Cross-Disciplinary Applied Research in Materials Science and Technololy Materials Science Forum, 480-481, 53-58. Recuperado de https://repositorio.usp.br/directbitstream/7e67de98-9b5a-43e1-9059-b268565bad79/Freitas_and_Yoshimura_MSF_2005.pdf
NLM
Freitas MB, Medeiros FHM, Yoshimura EM. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications [Internet]. Cross-Disciplinary Applied Research in Materials Science and Technololy Materials Science Forum. 2005 ; 480-481 53-58.[citado 2024 out. 12 ] Available from: https://repositorio.usp.br/directbitstream/7e67de98-9b5a-43e1-9059-b268565bad79/Freitas_and_Yoshimura_MSF_2005.pdf
Vancouver
Freitas MB, Medeiros FHM, Yoshimura EM. Detection properties of CdZnTe semiconductor for diagnostic X-ray spectroscopic applications [Internet]. Cross-Disciplinary Applied Research in Materials Science and Technololy Materials Science Forum. 2005 ; 480-481 53-58.[citado 2024 out. 12 ] Available from: https://repositorio.usp.br/directbitstream/7e67de98-9b5a-43e1-9059-b268565bad79/Freitas_and_Yoshimura_MSF_2005.pdf
Artigo de periodico
Charge transport and radiative recombination in polythiophene crystals: a first principles study (2003)
Ruini, A; Bussi, G; Ferreti, A; Caldas, Marília Junqueira; Molinari, E
Source: Synthetic Metals. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
RUINI, A et al. Charge transport and radiative recombination in polythiophene crystals: a first principles study. Synthetic Metals, 2003Tradução . . Disponível em: https://doi.org/10.1016/s0379-6779(03)00319-9. Acesso em: 12 out. 2024.
APA
Ruini, A., Bussi, G., Ferreti, A., Caldas, M. J., & Molinari, E. (2003). Charge transport and radiative recombination in polythiophene crystals: a first principles study. Synthetic Metals. doi:10.1016/s0379-6779(03)00319-9
NLM
Ruini A, Bussi G, Ferreti A, Caldas MJ, Molinari E. Charge transport and radiative recombination in polythiophene crystals: a first principles study [Internet]. Synthetic Metals. 2003 ;[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/s0379-6779(03)00319-9
Vancouver
Ruini A, Bussi G, Ferreti A, Caldas MJ, Molinari E. Charge transport and radiative recombination in polythiophene crystals: a first principles study [Internet]. Synthetic Metals. 2003 ;[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/s0379-6779(03)00319-9
Artigo de periodico
Theoretical study of protonation effects in polyaniline oligomers (2001)
Ancalla Dávila, Liliana Yolanda; Caldas, Marília Junqueira
Source: Synthetic Metals. Unidade: IF
Subjects: QUÍMICA QUÂNTICA, ELETRICIDADE E ELETRÔNICA, SEMICONDUTORES
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ABNT
ANCALLA DÁVILA, Liliana Yolanda e CALDAS, Marília Junqueira. Theoretical study of protonation effects in polyaniline oligomers. Synthetic Metals, v. 119, n. 1-3, p. 241-242, 2001Tradução . . Disponível em: https://doi.org/10.1016/s0379-6779(00)00916-4. Acesso em: 12 out. 2024.
APA
Ancalla Dávila, L. Y., & Caldas, M. J. (2001). Theoretical study of protonation effects in polyaniline oligomers. Synthetic Metals, 119( 1-3), 241-242. doi:10.1016/s0379-6779(00)00916-4
NLM
Ancalla Dávila LY, Caldas MJ. Theoretical study of protonation effects in polyaniline oligomers [Internet]. Synthetic Metals. 2001 ; 119( 1-3): 241-242.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/s0379-6779(00)00916-4
Vancouver
Ancalla Dávila LY, Caldas MJ. Theoretical study of protonation effects in polyaniline oligomers [Internet]. Synthetic Metals. 2001 ; 119( 1-3): 241-242.[citado 2024 out. 12 ] Available from: https://doi.org/10.1016/s0379-6779(00)00916-4
Artigo de periodico
Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role (2000)
Prado, Rogerio Junqueira; Fantini, Márcia Carvalho de Abreu ; Tabacniks, Manfredo Harri ; Pereyra, Inés ; Flank, A M
Source: Materials Science Forum. Unidades: IF, EP
Assunto: SEMICONDUTORES
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ABNT
PRADO, Rogerio Junqueira et al. Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role. Materials Science Forum, v. 338-342, n. 1, p. 329-332, 2000Tradução . . Acesso em: 12 out. 2024.
APA
Prado, R. J., Fantini, M. C. de A., Tabacniks, M. H., Pereyra, I., & Flank, A. M. (2000). Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role. Materials Science Forum, 338-342( 1), 329-332.
NLM
Prado RJ, Fantini MC de A, Tabacniks MH, Pereyra I, Flank AM. Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role. Materials Science Forum. 2000 ; 338-342( 1): 329-332.[citado 2024 out. 12 ]
Vancouver
Prado RJ, Fantini MC de A, Tabacniks MH, Pereyra I, Flank AM. Thin films of a-'Si IND.1-X''C IND.X':H deposited by PECVD: the r.f. power and 'H IND.2' dilution role. Materials Science Forum. 2000 ; 338-342( 1): 329-332.[citado 2024 out. 12 ]

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