Simoen, Eddy 
; Martino, João Antonio ; Aoulaiche, Marc; Santos, Sara Dereste dos; Strobel, V; Cretu, B; Routoure, J.-M; Carin, R; Tejada, Julián; Claeys, Cor ; Rodríguez, A. Luque
Fonte: ECS Journal of Solid State Science and Technology. Unidade: EP
Assuntos: SILÍCIO, FILMES FINOS
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SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 28 nov. 2025.APA
Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jssNLM
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jssVancouver
Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jss
