Filtros : "ECS Journal of Solid State Science and Technology" "FILMES FINOS" Removido: "HEMATITA" Limpar

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  • Source: ECS Journal of Solid State Science and Technology. Unidades: EP, IF

    Assunto: FILMES FINOS

    Versão PublicadaAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      CASSIMIRO, Vinicius R S et al. SiC Structural Analysis on Energized Microlamps in Micrometric Scale. ECS Journal of Solid State Science and Technology, 2025Tradução . . Disponível em: https://doi.org/10.1149/2162-8777/adc2d1. Acesso em: 28 nov. 2025.
    • APA

      Cassimiro, V. R. S., Cunha Júnior, R. M., Rehder, G. P., Pereyra, I., Carreño, M. N. P., Alayo, M. I., et al. (2025). SiC Structural Analysis on Energized Microlamps in Micrometric Scale. ECS Journal of Solid State Science and Technology. doi:https://doi.org/10.1149/2162-8777/adc2d1
    • NLM

      Cassimiro VRS, Cunha Júnior RM, Rehder GP, Pereyra I, Carreño MNP, Alayo MI, Trcera N, Scopel WL, Pérez CA, Rodrigues CL, Fantini MC de A. SiC Structural Analysis on Energized Microlamps in Micrometric Scale [Internet]. ECS Journal of Solid State Science and Technology. 2025 ;[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2162-8777/adc2d1
    • Vancouver

      Cassimiro VRS, Cunha Júnior RM, Rehder GP, Pereyra I, Carreño MNP, Alayo MI, Trcera N, Scopel WL, Pérez CA, Rodrigues CL, Fantini MC de A. SiC Structural Analysis on Energized Microlamps in Micrometric Scale [Internet]. ECS Journal of Solid State Science and Technology. 2025 ;[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2162-8777/adc2d1
  • Source: ECS Journal of Solid State Science and Technology. Unidade: EP

    Subjects: SILÍCIO, FILMES FINOS

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
    • ABNT

      SIMOEN, Eddy et al. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, v. 2, n. 11, p. Q205-Q210, 2013Tradução . . Disponível em: https://doi.org/10.1149/2.011311jss. Acesso em: 28 nov. 2025.
    • APA

      Simoen, E., Martino, J. A., Aoulaiche, M., Santos, S. D. dos, Strobel, V., Cretu, B., et al. (2013). Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities. ECS Journal of Solid State Science and Technology, 2( 11), Q205-Q210. doi:10.1149/2.011311jss
    • NLM

      Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jss
    • Vancouver

      Simoen E, Martino JA, Aoulaiche M, Santos SD dos, Strobel V, Cretu B, Routoure J-M, Carin R, Tejada J, Claeys C, Rodríguez AL. Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs: Challenges and Opportunities [Internet]. ECS Journal of Solid State Science and Technology. 2013 ; 2( 11): Q205-Q210.[citado 2025 nov. 28 ] Available from: https://doi.org/10.1149/2.011311jss

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