Menu

Filtros : "Guimarães, Francisco Eduardo Gontijo" "Physical Review B" Limpar

Filtros

Refine with date range

  • 1

1 - 3 (3 records)

  • Artigo de periodico

    Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices (2004)

    Pusep, Yuri A ; Guimarães, Francisco Eduardo Gontijo ; Ribeiro, M. B.; Arakaki, Haroldo; Souza, Carlos Alberto de; Malzer, S.; Döhler, G. H.

    Source: Physical Review B. Unidade: IFSC

    Subjects: FOTOLUMINESCÊNCIA, SEMICONDUTORES

    How to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      PUSEP, Yuri A et al. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, v. 70, n. 9, p. Se 2004, 2004Tradução . . Acesso em: 17 out. 2024.

    • APA

      Pusep, Y. A., Guimarães, F. E. G., Ribeiro, M. B., Arakaki, H., Souza, C. A. de, Malzer, S., & Döhler, G. H. (2004). Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B, 70( 9), Se 2004.

    • NLM

      Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2024 out. 17 ]

    • Vancouver

      Pusep YA, Guimarães FEG, Ribeiro MB, Arakaki H, Souza CA de, Malzer S, Döhler GH. Effect of compensation of electron and hole scattering potentials on the optical band edge of heavily doped GaAs/'Al IND.x''Ga IND.1-x'As superlattices. Physical Review B. 2004 ; 70( 9): Se 2004.[citado 2024 out. 17 ]

  • Artigo de periodico

    Defect-assisted photoluminescence intensity enhancement in poly(p-phenilene vinylene) films probed by time-resolved photoluminescence (2003)

    Anni, M.; Gigli, G.; Cingolani, R.; Gobato, Yara Galvão; Vercik, Andrés; Marletta, A.; Guimarães, Francisco Eduardo Gontijo ; Faria, Roberto Mendonça

    Source: Physical Review B. Unidade: IFSC

    Subjects: POLÍMEROS (MATERIAIS), LUMINESCÊNCIA

    Acesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      ANNI, M. et al. Defect-assisted photoluminescence intensity enhancement in poly(p-phenilene vinylene) films probed by time-resolved photoluminescence. Physical Review B, v. 68, n. 3, p. 035215-1-035215-6, 2003Tradução . . Disponível em: https://doi.org/10.1103/physrevb.68.035215. Acesso em: 17 out. 2024.

    • APA

      Anni, M., Gigli, G., Cingolani, R., Gobato, Y. G., Vercik, A., Marletta, A., et al. (2003). Defect-assisted photoluminescence intensity enhancement in poly(p-phenilene vinylene) films probed by time-resolved photoluminescence. Physical Review B, 68( 3), 035215-1-035215-6. doi:10.1103/physrevb.68.035215

    • NLM

      Anni M, Gigli G, Cingolani R, Gobato YG, Vercik A, Marletta A, Guimarães FEG, Faria RM. Defect-assisted photoluminescence intensity enhancement in poly(p-phenilene vinylene) films probed by time-resolved photoluminescence [Internet]. Physical Review B. 2003 ; 68( 3): 035215-1-035215-6.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.68.035215

    • Vancouver

      Anni M, Gigli G, Cingolani R, Gobato YG, Vercik A, Marletta A, Guimarães FEG, Faria RM. Defect-assisted photoluminescence intensity enhancement in poly(p-phenilene vinylene) films probed by time-resolved photoluminescence [Internet]. Physical Review B. 2003 ; 68( 3): 035215-1-035215-6.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.68.035215

  • Artigo de periodico

    Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates (2001)

    Freire, S L S; Reis, J E T; Cury, Luiz Alberto; Matinaga, F M; Sampaio, J F; Guimarães, Francisco Eduardo Gontijo

    Source: Physical Review B. Unidade: IFSC

    Assunto: LUMINESCÊNCIA

    PrivadoAcesso à fonteAcesso à fonteDOIHow to cite
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      FREIRE, S L S et al. Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates. Physical Review B, v. 64, p. 195325-1-195325-61, 2001Tradução . . Disponível em: https://doi.org/10.1103/physrevb.64.195325. Acesso em: 17 out. 2024.

    • APA

      Freire, S. L. S., Reis, J. E. T., Cury, L. A., Matinaga, F. M., Sampaio, J. F., & Guimarães, F. E. G. (2001). Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates. Physical Review B, 64, 195325-1-195325-61. doi:10.1103/physrevb.64.195325

    • NLM

      Freire SLS, Reis JET, Cury LA, Matinaga FM, Sampaio JF, Guimarães FEG. Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates [Internet]. Physical Review B. 2001 ;64 195325-1-195325-61.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.64.195325

    • Vancouver

      Freire SLS, Reis JET, Cury LA, Matinaga FM, Sampaio JF, Guimarães FEG. Optical studies of strain effects in quantum wells grown on (311) and (100) GaAs substrates [Internet]. Physical Review B. 2001 ;64 195325-1-195325-61.[citado 2024 out. 17 ] Available from: https://doi.org/10.1103/physrevb.64.195325
  • 1

1 - 3 (3 records)

Digital Library of Intellectual Production of Universidade de São Paulo     2012 - 2024