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Filtros : "CIRCUITOS INTEGRADOS" "Indexado no COMPENDEX" Limpar

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  • Artigo de periodico

    Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures (2004)

    Bellodi, Marcello; Martino, João Antonio

    Fonte: Journal Integrated Circuits and Systems. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

    Acesso à fonteDOIComo citar
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    • ABNT

      BELLODI, Marcello e MARTINO, João Antonio. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, v. 1, n. 2, p. 31-35, 2004Tradução . . Disponível em: https://doi.org/10.29292/jics.v1i2.261. Acesso em: 15 nov. 2025.

    • APA

      Bellodi, M., & Martino, J. A. (2004). Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures. Journal Integrated Circuits and Systems, 1( 2), 31-35. doi:10.29292/jics.v1i2.261

    • NLM

      Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v1i2.261

    • Vancouver

      Bellodi M, Martino JA. Study of the drain leakage current behavior in graded-channel SOI nMOSFETs operating at high temperatures [Internet]. Journal Integrated Circuits and Systems. 2004 ;1( 2): 31-35.[citado 2025 nov. 15 ] Available from: https://doi.org/10.29292/jics.v1i2.261

  • Artigo de periodico

    A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction (1997)

    Nicolett, Aparecido Sirley; Martino, João Antonio

    Fonte: Journal of Solid-State Devices and Circuits. Unidade: EP

    Assunto: CIRCUITOS INTEGRADOS

    Como citar
    A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas

    • ABNT

      NICOLETT, Aparecido Sirley e MARTINO, João Antonio. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 5-8, 1997Tradução . . Acesso em: 15 nov. 2025.

    • APA

      Nicolett, A. S., & Martino, J. A. (1997). A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, 5( 1), 5-8.

    • NLM

      Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2025 nov. 15 ]

    • Vancouver

      Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2025 nov. 15 ]
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