Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP (2020)
Source: IEEE Sensors Journal. Unidade: IFSC
Subjects: MATÉRIA CONDENSADA, FOTOLUMINESCÊNCIA
ABNT
BRAGA, Osvaldo M. et al. Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP. IEEE Sensors Journal, v. 20, n. 16, p. 9234-9244, 2020Tradução . . Disponível em: https://doi.org/10.1109/JSEN.2020.2987006. Acesso em: 13 nov. 2024.APA
Braga, O. M., Delfino, C. A., Kawabata, R. M. S., Pinto, L. D., Vieira, G. S., Pires, M. P., et al. (2020). Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP. IEEE Sensors Journal, 20( 16), 9234-9244. doi:10.1109/JSEN.2020.2987006NLM
Braga OM, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Junior E, Carlin JA, Krishna S. Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP [Internet]. IEEE Sensors Journal. 2020 ; 20( 16): 9234-9244.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/JSEN.2020.2987006Vancouver
Braga OM, Delfino CA, Kawabata RMS, Pinto LD, Vieira GS, Pires MP, Souza PL de, Marega Junior E, Carlin JA, Krishna S. Surface passivation of InGaAs/InP p-i-n photodiodes using epitaxial regrowth of InP [Internet]. IEEE Sensors Journal. 2020 ; 20( 16): 9234-9244.[citado 2024 nov. 13 ] Available from: https://doi.org/10.1109/JSEN.2020.2987006