Bernussi, A A; Iikawa, F; Motisuke, P; Basmaji, Pierre; Siu Li, Máximo 
; Hipólito, Oscar
Fonte: Journal of Applied Physics. Unidade: IFSC
Assunto: MATÉRIA CONDENSADA
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ABNT
BERNUSSI, A A et al. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, v. 67, n. 9 , p. 4149-51, 1990Tradução . . Acesso em: 15 nov. 2025.APA
Bernussi, A. A., Iikawa, F., Motisuke, P., Basmaji, P., Siu Li, M., & Hipólito, O. (1990). Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics, 67( 9 ), 4149-51.NLM
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 15 ]Vancouver
Bernussi AA, Iikawa F, Motisuke P, Basmaji P, Siu Li M, Hipólito O. Photoreflectance measurements on 'SI' 'DELTA'-doped 'GA''AS' samples grown by molecular-beam epitaxy. Journal of Applied Physics. 1990 ;67( 9 ): 4149-51.[citado 2025 nov. 15 ]
