New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects (2019)
Source: Abstracts. Conference titles: Reunião de Trabalho sobre Física Nuclear no Brasil. Unidade: IF
Assunto: TRANSISTORES
ABNT
GUAZZELLI, Marcilei A et al. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. 2019, Anais.. São Paulo: Sociedade Brasileira de Física, 2019. . Acesso em: 16 out. 2024.APA
Guazzelli, M. A., Bôas, A. C. V., Melo, M. A. A. de, Santos, R. B. B., Giacomini, R. C., Seixas, L. E., & Medina, N. H. (2019). New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. In Abstracts. São Paulo: Sociedade Brasileira de Física.NLM
Guazzelli MA, Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Seixas LE, Medina NH. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. Abstracts. 2019 ;[citado 2024 out. 16 ]Vancouver
Guazzelli MA, Bôas ACV, Melo MAA de, Santos RBB, Giacomini RC, Seixas LE, Medina NH. New generation of High Electron Mobility Transistors (HEMT) tolerant to radiation effects. Abstracts. 2019 ;[citado 2024 out. 16 ]