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Filtros : "TRANSISTORES" "Suiça" Limpar

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Artigo de periodico
Dendrimers/'TI''O IND. 2' nanoparticles layer-by-layer films as extended gate FET for pH detection (2012)
Vieira, Nirton C. S.; Figueiredo, Alessandra; Faceto, Angelo D.; Queiroz, Alvaro Antonio Alencar de ; Zucolotto, Valtencir ; Guimarães, Francisco Eduardo Gontijo
Source: Sensors and Actuators B. Unidade: IFSC
Subjects: TRANSISTORES, SENSOR (DESENVOLVIMENTO), NANOPARTÍCULAS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
VIEIRA, Nirton C. S. et al. Dendrimers/'TI''O IND. 2' nanoparticles layer-by-layer films as extended gate FET for pH detection. Sensors and Actuators B, v. 169, p. 397-400, 2012Tradução . . Disponível em: https://doi.org/10.1016/j.snb.2012.01.003. Acesso em: 14 set. 2024.
APA
Vieira, N. C. S., Figueiredo, A., Faceto, A. D., Queiroz, A. A. A. de, Zucolotto, V., & Guimarães, F. E. G. (2012). Dendrimers/'TI''O IND. 2' nanoparticles layer-by-layer films as extended gate FET for pH detection. Sensors and Actuators B, 169, 397-400. doi:10.1016/j.snb.2012.01.003
NLM
Vieira NCS, Figueiredo A, Faceto AD, Queiroz AAA de, Zucolotto V, Guimarães FEG. Dendrimers/'TI''O IND. 2' nanoparticles layer-by-layer films as extended gate FET for pH detection [Internet]. Sensors and Actuators B. 2012 ; 169 397-400.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.snb.2012.01.003
Vancouver
Vieira NCS, Figueiredo A, Faceto AD, Queiroz AAA de, Zucolotto V, Guimarães FEG. Dendrimers/'TI''O IND. 2' nanoparticles layer-by-layer films as extended gate FET for pH detection [Internet]. Sensors and Actuators B. 2012 ; 169 397-400.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.snb.2012.01.003
Artigo de periodico
Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs (2010)
Rodrigues, M.; Martino, João Antonio ; Mercha, A.; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Subjects: TRANSISTORES, ELETRODO
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
RODRIGUES, M. et al. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, v. 54, n. 12, p. 1592-1597, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2010.07.007. Acesso em: 14 set. 2024.
APA
Rodrigues, M., Martino, J. A., Mercha, A., Collaert, N., Simoen, E., & Claeys, C. (2010). Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, 54( 12), 1592-1597. doi:10.1016/j.sse.2010.07.007
NLM
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007
Vancouver
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2024 set. 14 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007

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