Rodrigues, M.; Martino, João Antonio 
; Mercha, A.; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor
Source: Solid-State Electronics. Unidade: EP
Subjects: TRANSISTORES, ELETRODO
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RODRIGUES, M. et al. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, v. 54, n. 12, p. 1592-1597, 2010Tradução . . Disponível em: https://doi.org/10.1016/j.sse.2010.07.007. Acesso em: 15 set. 2024.APA
Rodrigues, M., Martino, J. A., Mercha, A., Collaert, N., Simoen, E., & Claeys, C. (2010). Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs. Solid-State Electronics, 54( 12), 1592-1597. doi:10.1016/j.sse.2010.07.007NLM
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007Vancouver
Rodrigues M, Martino JA, Mercha A, Collaert N, Simoen E, Claeys C. Low-frequency noise and static analysis of the impact of the TiN metal gate thicknesses on n- and p-channel MuGFETs [Internet]. Solid-State Electronics. 2010 ;54( 12): 1592-1597.[citado 2024 set. 15 ] Available from: https://doi.org/10.1016/j.sse.2010.07.007
