Source: Journal of Materials Science. Unidade: IFSC
Assunto: CRISTALOGRAFIA FÍSICA (ESTATÍSTICAS E DADOS NUMÉRICOS)
ABNT
OCTAVIANO, E S e ANDREETA, José Pedro e GALLO, Nelson José Heraldo. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, v. 28, p. 65-8, 1993Tradução . . Acesso em: 28 nov. 2025.APA
Octaviano, E. S., Andreeta, J. P., & Gallo, N. J. H. (1993). Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, 28, 65-8.NLM
Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.[citado 2025 nov. 28 ]Vancouver
Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.[citado 2025 nov. 28 ]
