Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process

Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process (1993)

Authors:
USP affiliated authors: GALLO, NELSON JOSE HERALDO - IFSC ; ANDREETA, JOSE PEDRO - IFSC
Unidade: IFSC
Assunto: CRISTALOGRAFIA FÍSICA (ESTATÍSTICAS E DADOS NUMÉRICOS)
Language: Inglês
Imprenta:
- Publisher place: London
- Date published: 1993
Source:
- Título do periódico: Journal of Materials Science
- Volume/Número/Paginação/Ano: v.28, p.65-8, 1993

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ABNT

OCTAVIANO, E S; ANDREETA, José Pedro; GALLO, Nelson José Heraldo. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, London, v. 28, p. 65-8, 1993.
APA

Octaviano, E. S., Andreeta, J. P., & Gallo, N. J. H. (1993). Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, 28, 65-8.
NLM

Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.
Vancouver

Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.