Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process (1993)
- Authors:
- USP affiliated authors: GALLO, NELSON JOSE HERALDO - IFSC ; ANDREETA, JOSE PEDRO - IFSC
- Unidade: IFSC
- Assunto: CRISTALOGRAFIA FÍSICA (ESTATÍSTICAS E DADOS NUMÉRICOS)
- Language: Inglês
- Imprenta:
- Source:
- Título: Journal of Materials Science
- Volume/Número/Paginação/Ano: v.28, p.65-8, 1993
-
ABNT
OCTAVIANO, E S e ANDREETA, José Pedro e GALLO, Nelson José Heraldo. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, v. 28, p. 65-8, 1993Tradução . . Acesso em: 15 fev. 2026. -
APA
Octaviano, E. S., Andreeta, J. P., & Gallo, N. J. H. (1993). Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science, 28, 65-8. -
NLM
Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.[citado 2026 fev. 15 ] -
Vancouver
Octaviano ES, Andreeta JP, Gallo NJH. Electric field influence in dopant segregation in the 'LI''NB''O IND.3': 'CR POT.3+' crystal growth process. Journal of Materials Science. 1993 ;28 65-8.[citado 2026 fev. 15 ] - Direct observation of the structural defects in oxide superconductors of high tc single crystal
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