Recombination dynamics of Landau levels in an InGaAs/InP quantum well (2019)
Fonte: Poster contributions. Nome do evento: International Conference on Low Dimensional Structures and Devices - LDSD. Unidade: IFSC
Assuntos: FOTOLUMINESCÊNCIA, POÇOS QUÂNTICOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
TAVARES, Belarmino Gomes Mendes et al. Recombination dynamics of Landau levels in an InGaAs/InP quantum well. 2019, Anais.. Bristol: Institute of Physics - IOP, 2019. Disponível em: http://www.ldsd2019.org/committees. Acesso em: 27 ago. 2024.APA
Tavares, B. G. M., Teodoro, M. D., Castro, E. D. G., LaPierre, R. R., & Pusep, Y. A. (2019). Recombination dynamics of Landau levels in an InGaAs/InP quantum well. In Poster contributions. Bristol: Institute of Physics - IOP. Recuperado de http://www.ldsd2019.org/committeesNLM
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 ago. 27 ] Available from: http://www.ldsd2019.org/committeesVancouver
Tavares BGM, Teodoro MD, Castro EDG, LaPierre RR, Pusep YA. Recombination dynamics of Landau levels in an InGaAs/InP quantum well [Internet]. Poster contributions. 2019 ;[citado 2024 ago. 27 ] Available from: http://www.ldsd2019.org/committees