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Artigo de periodico
Bound photoinduced giant spin polaron in EuTe (2022)
Henriques, André Bohomoletz ; Kooten, Sjoerd Van ; Abramof, Eduardo ; Rappl, P.H.O. ; Galgano, Giovanni Decot
Source: Journal of Applied Physics. Unidade: IF
Subjects: FÍSICO-QUÍMICA, SEMICONDUTORES (FÍSICO-QUÍMICA), FOTOLUMINESCÊNCIA, ESPECTROSCOPIA DA LUZ, SPIN, POLARIZAÇÃO, MÉTODO DE MONTE CARLO
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ABNT
HENRIQUES, André Bohomoletz et al. Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, v. 131, n. 4, 2022Tradução . . Disponível em: https://doi.org/10.1063/5.0079384. Acesso em: 09 nov. 2025.
APA
Henriques, A. B., Kooten, S. V., Abramof, E., Rappl, P. H. O., & Galgano, G. D. (2022). Bound photoinduced giant spin polaron in EuTe. Journal of Applied Physics, 131( 4). doi:10.1063/5.0079384
NLM
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/5.0079384
Vancouver
Henriques AB, Kooten SV, Abramof E, Rappl PHO, Galgano GD. Bound photoinduced giant spin polaron in EuTe [Internet]. Journal of Applied Physics. 2022 ; 131( 4):[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/5.0079384
Artigo de periodico
Converting Faraday rotation into magnetization in europium chalcogenides (2019)
Van Kooten, S C P; Usachev, P A; Gratens, Xavier Pierre Marie; Naupa, A R; Chitta, Valmir Antonio ; Springholz, G; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Assunto: FERROMAGNETISMO
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ABNT
VAN KOOTEN, S C P et al. Converting Faraday rotation into magnetization in europium chalcogenides. Journal of Applied Physics, v. 126, p. 095701(8), 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5116150. Acesso em: 09 nov. 2025.
APA
Van Kooten, S. C. P., Usachev, P. A., Gratens, X. P. M., Naupa, A. R., Chitta, V. A., Springholz, G., & Henriques, A. B. (2019). Converting Faraday rotation into magnetization in europium chalcogenides. Journal of Applied Physics, 126, 095701(8). doi:10.1063/1.5116150
NLM
Van Kooten SCP, Usachev PA, Gratens XPM, Naupa AR, Chitta VA, Springholz G, Henriques AB. Converting Faraday rotation into magnetization in europium chalcogenides [Internet]. Journal of Applied Physics. 2019 ; 126 095701(8).[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5116150
Vancouver
Van Kooten SCP, Usachev PA, Gratens XPM, Naupa AR, Chitta VA, Springholz G, Henriques AB. Converting Faraday rotation into magnetization in europium chalcogenides [Internet]. Journal of Applied Physics. 2019 ; 126 095701(8).[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5116150
Artigo de periodico
Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' (2018)
Pavlov, V. V.; Pisarev, R. V.; Nefedov, S. G.; Akimov, I. A.; Yakovlev, D. R.; Bayer, M.; Rappl, P. H. O.; Abramof, E.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Subjects: SEMICONDUTORES, MAGNETISMO, FERROMAGNETISMO
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ABNT
PAVLOV, V. V. et al. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, v. 123, n. 19, p. 193102, 2018Tradução . . Disponível em: https://doi.org/10.1063/1.5027473. Acesso em: 09 nov. 2025.
APA
Pavlov, V. V., Pisarev, R. V., Nefedov, S. G., Akimov, I. A., Yakovlev, D. R., Bayer, M., et al. (2018). Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE'. Journal of Applied Physics, 123( 19), 193102. doi:10.1063/1.5027473
NLM
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5027473
Vancouver
Pavlov VV, Pisarev RV, Nefedov SG, Akimov IA, Yakovlev DR, Bayer M, Rappl PHO, Abramof E, Henriques AB. Magnetic-field-induced crossover from the inverse faraday effect to the optical orientation in 'EU'TE' [Internet]. Journal of Applied Physics. 2018 ; 123( 19): 193102.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.5027473
Artigo de periodico
Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy (2003)
Hanamoto, L K; Farias, C. M. A.; Henriques, André Bohomoletz ; Tribuzy, C V B; Saouza, P L; Yavich, B
Source: Journal of Applied Physics. Unidade: IF
Subjects: ESTRUTURA ELETRÔNICA, DIFRAÇÃO POR RAIOS X
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ABNT
HANAMOTO, L K et al. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 93, n. 9, p. 5460-5464, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1566477. Acesso em: 09 nov. 2025.
APA
Hanamoto, L. K., Farias, C. M. A., Henriques, A. B., Tribuzy, C. V. B., Saouza, P. L., & Yavich, B. (2003). Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 93( 9), 5460-5464. doi:10.1063/1.1566477
NLM
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1566477
Vancouver
Hanamoto LK, Farias CMA, Henriques AB, Tribuzy CVB, Saouza PL, Yavich B. Influence of the interface layers on the transport properties of InP/InGaAs quantum barrier structures grow low pressure metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2003 ; 93( 9): 5460-5464.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1566477
Artigo de periodico
Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy (2001)
Tribuzy, C V B; Butendeich, R; Pires, M P; Souza, P. L.; Henriques, André Bohomoletz
Source: Journal of Applied Physics. Unidade: IF
Assunto: FÍSICA
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ABNT
TRIBUZY, C V B et al. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 90, n. 3, p. 1660-1662, 2001Tradução . . Disponível em: https://doi.org/10.1063/1.1382826. Acesso em: 09 nov. 2025.
APA
Tribuzy, C. V. B., Butendeich, R., Pires, M. P., Souza, P. L., & Henriques, A. B. (2001). Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy. Journal of Applied Physics, 90( 3), 1660-1662. doi:10.1063/1.1382826
NLM
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1382826
Vancouver
Tribuzy CVB, Butendeich R, Pires MP, Souza PL, Henriques AB. Carbon delta-doped AlGaAs grown by metalorganic vapor phase epitaxy [Internet]. Journal of Applied Physics. 2001 ; 90( 3): 1660-1662.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1382826
Artigo de periodico
Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy (1997)
Souza, P. L.; Yavich, B; Pamplona-Pires, M; Henriques, André Bohomoletz ; Gonçalves, L. C. D.
Source: Journal of Applied Physics. Unidade: IF
Assunto: ELETRÔNICA
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ABNT
SOUZA, P. L. et al. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, v. 82, n. 4, p. 1700-1705, 1997Tradução . . Acesso em: 09 nov. 2025.
APA
Souza, P. L., Yavich, B., Pamplona-Pires, M., Henriques, A. B., & Gonçalves, L. C. D. (1997). Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics, 82( 4), 1700-1705.
NLM
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2025 nov. 09 ]
Vancouver
Souza PL, Yavich B, Pamplona-Pires M, Henriques AB, Gonçalves LCD. Electronic and optical properties of periodically 'Si''Gama-doped''InP'grown by low pressure metalorganic vapor phase epitaxy. Journal of Applied Physics. 1997 ; 82( 4): 1700-1705.[citado 2025 nov. 09 ]

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