ReP USP - Resultado da busca

Artigo de periodico
Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor (2015)
Scoca, D.; Morales, M.; Merlo, R.; Alvarez, F.; Zanatta, Antonio Ricardo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FOTOLUMINESCÊNCIA, FILMES FINOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SCOCA, D. et al. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, v. 117, n. 20, p. 205304-1-205304-6, 2015Tradução . . Disponível em: https://doi.org/10.1063/1.4921809. Acesso em: 09 nov. 2025.
APA
Scoca, D., Morales, M., Merlo, R., Alvarez, F., & Zanatta, A. R. (2015). Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor. Journal of Applied Physics, 117( 20), 205304-1-205304-6. doi:10.1063/1.4921809
NLM
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4921809
Vancouver
Scoca D, Morales M, Merlo R, Alvarez F, Zanatta AR. Photoluminescence and compositional-structural properties of ion-beam sputter deposited Er-doped TiO2-xNx films: their potential as a temperature sensor [Internet]. Journal of Applied Physics. 2015 ; 117( 20): 205304-1-205304-6.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.4921809
Artigo de periodico
Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes (2011)
Acuña, J. J. S.; Escobar, M.; Goyanes, S. N.; Candal, R. J.; Zanatta, Antonio Ricardo ; Alvarez, F.
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: FILMES FINOS, NANOTECNOLOGIA, NANOPARTÍCULAS, ESPECTROSCOPIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ACUÑA, J. J. S. et al. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, v. 109, n. 11, p. 114317-1-114317-7, 2011Tradução . . Disponível em: https://doi.org/10.1063/1.3593269. Acesso em: 09 nov. 2025.
APA
Acuña, J. J. S., Escobar, M., Goyanes, S. N., Candal, R. J., Zanatta, A. R., & Alvarez, F. (2011). Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes. Journal of Applied Physics, 109( 11), 114317-1-114317-7. doi:10.1063/1.3593269
NLM
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3593269
Vancouver
Acuña JJS, Escobar M, Goyanes SN, Candal RJ, Zanatta AR, Alvarez F. Effect of ''O IND. 2' POT. +', ''H IND. 2' POT. +' + ''O IND. 2' POT. +', and ''N IND. 2' POT.+' + ''O IND. 2'POT. +' ion-beam irradiation on the field emission properties of carbon nanotubes [Internet]. Journal of Applied Physics. 2011 ; 109( 11): 114317-1-114317-7.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.3593269
Artigo de periodico
X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films (2003)
Zanatta, Antonio Ricardo ; Ribeiro, C. T. M.; Alvarez, F.
Source: Journal of Applied Physics. Unidade: IFSC
Assunto: FÍSICA DA MATÉRIA CONDENSADA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
ZANATTA, Antonio Ricardo e RIBEIRO, C. T. M. e ALVAREZ, F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films. Journal of Applied Physics, v. 93, n. 4, p. 1948-1953, 2003Tradução . . Disponível em: https://doi.org/10.1063/1.1536015. Acesso em: 09 nov. 2025.
APA
Zanatta, A. R., Ribeiro, C. T. M., & Alvarez, F. (2003). X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films. Journal of Applied Physics, 93( 4), 1948-1953. doi:10.1063/1.1536015
NLM
Zanatta AR, Ribeiro CTM, Alvarez F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films [Internet]. Journal of Applied Physics. 2003 ; 93( 4): 1948-1953.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1536015
Vancouver
Zanatta AR, Ribeiro CTM, Alvarez F. X-ray photoelectron spectroscopic study of rare-earth-doped amorphous silicon-nitrogen films [Internet]. Journal of Applied Physics. 2003 ; 93( 4): 1948-1953.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1063/1.1536015

USP Schools

ReP

Filtros

Authors

Subjects

Non normalized affiliation