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Artigo de periodico
Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses (2025)
Saraiva, Murilo Neco; Mendonça, Cleber Renato
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: VIDRO, ÓPTICA NÃO LINEAR, INTELIGÊNCIA ARTIFICIAL, APRENDIZADO COMPUTACIONAL
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SARAIVA, Murilo Neco e MENDONÇA, Cleber Renato. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses. Journal of Applied Physics, v. 138, n. 14, p. 143103-1-143103-12 + supplementary material, 2025Tradução . . Disponível em: https://doi.org/10.1063/5.0289970. Acesso em: 08 nov. 2025.
APA
Saraiva, M. N., & Mendonça, C. R. (2025). Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses. Journal of Applied Physics, 138( 14), 143103-1-143103-12 + supplementary material. doi:10.1063/5.0289970
NLM
Saraiva MN, Mendonça CR. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses [Internet]. Journal of Applied Physics. 2025 ; 138( 14): 143103-1-143103-12 + supplementary material.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0289970
Vancouver
Saraiva MN, Mendonça CR. Assessing the potential of machine learning for predicting the nonlinear refractive index of glasses [Internet]. Journal of Applied Physics. 2025 ; 138( 14): 143103-1-143103-12 + supplementary material.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0289970
Artigo de periodico
Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects (2024)
Sandoval, Marcelo Alejandro Toloza ; Padilla, Jhon Elber Leon ; Wanderley, Adilson Barros ; Sipahi, Guilherme Matos ; Chubaci, José Fernando Diniz ; Silva, Antonio Ferreira da
Source: Journal of Applied Physics. Unidades: IFSC, IF
Subjects: APRENDIZADO COMPUTACIONAL, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SANDOVAL, Marcelo Alejandro Toloza et al. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, v. 135, n. 10, p. 103901-1-103901-9, 2024Tradução . . Disponível em: https://doi.org/10.1063/5.0187962. Acesso em: 08 nov. 2025.
APA
Sandoval, M. A. T., Padilla, J. E. L., Wanderley, A. B., Sipahi, G. M., Chubaci, J. F. D., & Silva, A. F. da. (2024). Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects. Journal of Applied Physics, 135( 10), 103901-1-103901-9. doi:10.1063/5.0187962
NLM
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Vancouver
Sandoval MAT, Padilla JEL, Wanderley AB, Sipahi GM, Chubaci JFD, Silva AF da. Driven electron g-factor anisotropy in layered III–V semiconductors: interfacing, tunnel coupling, and structure inversion asymmetry effects [Internet]. Journal of Applied Physics. 2024 ; 135( 10): 103901-1-103901-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/5.0187962
Artigo de periodico
Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures (2019)
Pereira, Alessandra; Conte, Gilmar; Faceto, Angelo Danilo; Nunes, Luiz Antônio de Oliveira ; Quirino, Welber G.; Legnani, Cristiano; Gallardo, Hugo; Cremona, Marco; Bechtold, Ivan H.; Guimarães, Francisco Eduardo Gontijo
Source: Journal of Applied Physics. Unidade: IFSC
Subjects: LUMINESCÊNCIA, EMISSÃO DA LUZ, FILMES FINOS, ÓPTICA NÃO LINEAR
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
PEREIRA, Alessandra et al. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, v. 126, n. 16, p. 165501-1-165501-9, 2019Tradução . . Disponível em: https://doi.org/10.1063/1.5099014. Acesso em: 08 nov. 2025.
APA
Pereira, A., Conte, G., Faceto, A. D., Nunes, L. A. de O., Quirino, W. G., Legnani, C., et al. (2019). Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures. Journal of Applied Physics, 126( 16), 165501-1-165501-9. doi:10.1063/1.5099014
NLM
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5099014
Vancouver
Pereira A, Conte G, Faceto AD, Nunes LA de O, Quirino WG, Legnani C, Gallardo H, Cremona M, Bechtold IH, Guimarães FEG. Influence of nonradiative Auger process in the lanthanide complexes lifetime near interfaces in organic light-emitting diode structures [Internet]. Journal of Applied Physics. 2019 ; 126( 16): 165501-1-165501-9.[citado 2025 nov. 08 ] Available from: https://doi.org/10.1063/1.5099014

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