Deep trench etching in silicon with fluorine containing plasmas (1996)
Mansano, Ronaldo Domingues 
; Verdonck, Patrick Bernard; Maciel, H. S.
Fonte: Applied Surface Science. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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MANSANO, Ronaldo Domingues e VERDONCK, Patrick Bernard e MACIEL, H. S. Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, v. 100/101, p. 583-586, 1996Tradução . . Disponível em: https://doi.org/10.1016/0169-4332(96)00343-1. Acesso em: 09 nov. 2025.APA
Mansano, R. D., Verdonck, P. B., & Maciel, H. S. (1996). Deep trench etching in silicon with fluorine containing plasmas. Applied Surface Science, 100/101, 583-586. doi:10.1016/0169-4332(96)00343-1NLM
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ; 100/101 583-586.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1Vancouver
Mansano RD, Verdonck PB, Maciel HS. Deep trench etching in silicon with fluorine containing plasmas [Internet]. Applied Surface Science. 1996 ; 100/101 583-586.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/0169-4332(96)00343-1
