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Artigo de periodico
Theoretical study of the influence of vacancies in the magnetic stability of 'V'-, 'CR'-, and 'MN'-doped 'SN'O IND.2' (2013)
Borges, Pablo D.; Scolfaro, Luisa M.R.; Alves, Horácio W. Leite; Silva Jr., Eronides F. da Silva; Assali, Lucy Vitoria Credidio
Source: Applied Surface Science. Unidade: IF
Assunto: SEMICONDUTORES
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ABNT
BORGES, Pablo D. et al. Theoretical study of the influence of vacancies in the magnetic stability of 'V'-, 'CR'-, and 'MN'-doped 'SN'O IND.2'. Applied Surface Science, v. fe2013, p. 115-118, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2012.08.096. Acesso em: 09 nov. 2025.
APA
Borges, P. D., Scolfaro, L. M. R., Alves, H. W. L., Silva Jr., E. F. da S., & Assali, L. V. C. (2013). Theoretical study of the influence of vacancies in the magnetic stability of 'V'-, 'CR'-, and 'MN'-doped 'SN'O IND.2'. Applied Surface Science, fe2013, 115-118. doi:10.1016/j.apsusc.2012.08.096
NLM
Borges PD, Scolfaro LMR, Alves HWL, Silva Jr. EF da S, Assali LVC. Theoretical study of the influence of vacancies in the magnetic stability of 'V'-, 'CR'-, and 'MN'-doped 'SN'O IND.2' [Internet]. Applied Surface Science. 2013 ; fe2013 115-118.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2012.08.096
Vancouver
Borges PD, Scolfaro LMR, Alves HWL, Silva Jr. EF da S, Assali LVC. Theoretical study of the influence of vacancies in the magnetic stability of 'V'-, 'CR'-, and 'MN'-doped 'SN'O IND.2' [Internet]. Applied Surface Science. 2013 ; fe2013 115-118.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2012.08.096
Artigo de periodico
Luminescence studies on nitride quaternary alloys double quantum wells (2008)
Rodrigues, S. C. P.; Santos, O. F. P; Scolfaro, Luisa Maria Ribeiro; Sipahi, Guilherme Matos ; Silva Junior, E. F
Source: Applied Surface Science. Unidades: IF, IFSC
Subjects: FOTOLUMINESCÊNCIA, LUMINESCÊNCIA, ESPECTROS, SEMICONDUTORES
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ABNT
RODRIGUES, S. C. P. et al. Luminescence studies on nitride quaternary alloys double quantum wells. Applied Surface Science, v. 254, n. 23, p. Se 2008, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2008.02.034. Acesso em: 09 nov. 2025.
APA
Rodrigues, S. C. P., Santos, O. F. P., Scolfaro, L. M. R., Sipahi, G. M., & Silva Junior, E. F. (2008). Luminescence studies on nitride quaternary alloys double quantum wells. Applied Surface Science, 254( 23), Se 2008. doi:10.1016/j.apsusc.2008.02.034
NLM
Rodrigues SCP, Santos OFP, Scolfaro LMR, Sipahi GM, Silva Junior EF. Luminescence studies on nitride quaternary alloys double quantum wells [Internet]. Applied Surface Science. 2008 ; 254( 23): Se 2008.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2008.02.034
Vancouver
Rodrigues SCP, Santos OFP, Scolfaro LMR, Sipahi GM, Silva Junior EF. Luminescence studies on nitride quaternary alloys double quantum wells [Internet]. Applied Surface Science. 2008 ; 254( 23): Se 2008.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2008.02.034
Artigo de periodico
The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor (2008)
Rodrigues, S. C. P.; Araújo, Y. R. V.; Sipahi, Guilherme Matos ; Scolfaro, Luisa Maria Ribeiro; Silva Junior, E. F.
Source: Applied Surface Science. Unidades: IFSC, IF
Subjects: SPIN, POLARIZAÇÃO, FERROMAGNETISMO, SEMICONDUTORES
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ABNT
RODRIGUES, S. C. P. et al. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor. Applied Surface Science, v. No 2008, n. 3, p. 709-711, 2008Tradução . . Disponível em: https://doi.org/10.1016/j.apsusc.2008.07.015. Acesso em: 09 nov. 2025.
APA
Rodrigues, S. C. P., Araújo, Y. R. V., Sipahi, G. M., Scolfaro, L. M. R., & Silva Junior, E. F. (2008). The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor. Applied Surface Science, No 2008( 3), 709-711. doi:10.1016/j.apsusc.2008.07.015
NLM
Rodrigues SCP, Araújo YRV, Sipahi GM, Scolfaro LMR, Silva Junior EF. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor [Internet]. Applied Surface Science. 2008 ; No 2008( 3): 709-711.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2008.07.015
Vancouver
Rodrigues SCP, Araújo YRV, Sipahi GM, Scolfaro LMR, Silva Junior EF. The effect of additional Si and SiGE layers on the confinement potential of GeMn diluted ferromagnetic semiconductor [Internet]. Applied Surface Science. 2008 ; No 2008( 3): 709-711.[citado 2025 nov. 09 ] Available from: https://doi.org/10.1016/j.apsusc.2008.07.015
Artigo de periodico
Characterization of W'O IND. 3': Ag films: ToF-SIMS studies of ammonia adsorption (2005)
Bittencourt, Carla; Felicissimo, M. P.; Felten, A.; Nunes, Luiz Antônio de Oliveira ; Ivanov, P.; Llobet, E.; Pireaux, Jean-Jacques; Houssiau, Laurent
Source: Applied Surface Science. Unidade: IFSC
Subjects: FILMES FINOS, SEMICONDUTORES, AMÔNIA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BITTENCOURT, Carla et al. Characterization of W'O IND. 3': Ag films: ToF-SIMS studies of ammonia adsorption. Applied Surface Science, v. 250, n. 1/4, p. 21-28, 2005Tradução . . Acesso em: 09 nov. 2025.
APA
Bittencourt, C., Felicissimo, M. P., Felten, A., Nunes, L. A. de O., Ivanov, P., Llobet, E., et al. (2005). Characterization of W'O IND. 3': Ag films: ToF-SIMS studies of ammonia adsorption. Applied Surface Science, 250( 1/4), 21-28.
NLM
Bittencourt C, Felicissimo MP, Felten A, Nunes LA de O, Ivanov P, Llobet E, Pireaux J-J, Houssiau L. Characterization of W'O IND. 3': Ag films: ToF-SIMS studies of ammonia adsorption. Applied Surface Science. 2005 ; 250( 1/4): 21-28.[citado 2025 nov. 09 ]
Vancouver
Bittencourt C, Felicissimo MP, Felten A, Nunes LA de O, Ivanov P, Llobet E, Pireaux J-J, Houssiau L. Characterization of W'O IND. 3': Ag films: ToF-SIMS studies of ammonia adsorption. Applied Surface Science. 2005 ; 250( 1/4): 21-28.[citado 2025 nov. 09 ]

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