DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices (2010)
Santos, Sara Dereste dos 
; Nicoletti, Talitha; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Fonte: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Assunto: DISPOSITIVOS ELETRÔNICOS
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SANTOS, Sara Dereste dos et al. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 51-58, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474141. Acesso em: 08 out. 2025.APA
Santos, S. D. dos, Nicoletti, T., Martino, J. A., Simoen, E., & Claeys, C. (2010). DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 51-58. doi:10.1149/1.3474141NLM
Santos SD dos, Nicoletti T, Martino JA, Simoen E, Claeys C. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 51-58.[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.3474141Vancouver
Santos SD dos, Nicoletti T, Martino JA, Simoen E, Claeys C. DIBL behavior of triple gate FinFETs with SEG on biaxial strained devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 51-58.[citado 2025 out. 08 ] Available from: https://doi.org/10.1149/1.3474141
