ReP USP - Resultado da busca

Trabalho de evento
A method for deposition rate estimation on a low-cost home-built DC sputter system (2022)
Pinto, H. M.; Jasinevicius, Renato Goulart; Cirino, G. A.
Conference titles: Symposium on Microelectronics Technology and Devices - SBMicro. Unidade: EESC
Subjects: FILMES FINOS, SEMICONDUTORES, ENGENHARIA MECÂNICA
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ABNT
PINTO, H. M. e JASINEVICIUS, Renato Goulart e CIRINO, G. A. A method for deposition rate estimation on a low-cost home-built DC sputter system. 2022, Anais.. Piscataway, NJ, USA: IEEE, 2022. Disponível em: https://doi.org/10.1109/SBMICRO55822.2022.9881038. Acesso em: 03 nov. 2024.
APA
Pinto, H. M., Jasinevicius, R. G., & Cirino, G. A. (2022). A method for deposition rate estimation on a low-cost home-built DC sputter system. In . Piscataway, NJ, USA: IEEE. doi:10.1109/SBMICRO55822.2022.9881038
NLM
Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 nov. 03 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038
Vancouver
Pinto HM, Jasinevicius RG, Cirino GA. A method for deposition rate estimation on a low-cost home-built DC sputter system [Internet]. 2022 ;[citado 2024 nov. 03 ] Available from: https://doi.org/10.1109/SBMICRO55822.2022.9881038
Trabalho de evento-anais periodico
The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation (2014)
Pizani, Paulo Sérgio; Jasinevicius, Renato Goulart
Source: Journal of Physics: Conference Series. Conference titles: Biennial International Conference of the APS Topical Group on Shock Compression of Condensed Matter - APS-SCCM. Unidade: EESC
Subjects: ESPECTROSCOPIA RAMAN, SEMICONDUTORES
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ABNT
PIZANI, Paulo Sérgio e JASINEVICIUS, Renato Goulart. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. Disponível em: https://doi.org/10.1088/1742-6596/500/18/182032. Acesso em: 03 nov. 2024. , 2014
APA
Pizani, P. S., & Jasinevicius, R. G. (2014). The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation. Journal of Physics: Conference Series. Bristol: Escola de Engenharia de São Carlos, Universidade de São Paulo. doi:10.1088/1742-6596/500/18/182032
NLM
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Vancouver
Pizani PS, Jasinevicius RG. The effect of high non-hydrostatic pressure on III-V semiconductors: zinc blende to wurtzite structural phase transition and multiphase generation [Internet]. Journal of Physics: Conference Series. 2014 ; 500 1-5.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/1742-6596/500/18/182032
Trabalho de evento
On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning (2011)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Conference Proceedings. Conference titles: euspen International Conference. Unidade: EESC
Subjects: DIAMANTE, SEMICONDUTORES
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ABNT
JASINEVICIUS, Renato Goulart et al. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. 2011, Anais.. Deft: euspen, 2011. Disponível em: http://www.euspen.eu/default.asp?langid=1&contentid=1451. Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Duduch, J. G., & Pizani, P. S. (2011). On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning. In Conference Proceedings. Deft: euspen. Recuperado de http://www.euspen.eu/default.asp?langid=1&contentid=1451
NLM
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 nov. 03 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Vancouver
Jasinevicius RG, Porto AJV, Duduch JG, Pizani PS. On the fabrication of Fresnel lens array in soft semiconductor crystal by use of ultraprecision diamond turning [Internet]. Conference Proceedings. 2011 ;[citado 2024 nov. 03 ] Available from: http://www.euspen.eu/default.asp?langid=1&contentid=1451
Artigo de periodico
Structure evaluation of submicrometre silicon chips removed by diamond turning (2007)
Jasinevicius, Renato Goulart; Duduch, Jaime Gilberto; Pizani, Paulo Sérgio
Source: Semiconductor Science and Technology. Unidade: EESC
Subjects: SEMICONDUTORES, MICROSCÓPIO ELETRÔNICO, DIAMANTE
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ABNT
JASINEVICIUS, Renato Goulart e DUDUCH, Jaime Gilberto e PIZANI, Paulo Sérgio. Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, v. 22, n. 5, p. 561-573, 2007Tradução . . Disponível em: https://doi.org/10.1088/0268-1242/22/5/019. Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G., Duduch, J. G., & Pizani, P. S. (2007). Structure evaluation of submicrometre silicon chips removed by diamond turning. Semiconductor Science and Technology, 22( 5), 561-573. doi:10.1088/0268-1242/22/5/019
NLM
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Vancouver
Jasinevicius RG, Duduch JG, Pizani PS. Structure evaluation of submicrometre silicon chips removed by diamond turning [Internet]. Semiconductor Science and Technology. 2007 ; 22( 5): 561-573.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1088/0268-1242/22/5/019
Artigo de periodico
On the ductile response dependence upon phase transformation in diamond turning of semiconductors (2007)
Jasinevicius, Renato Goulart; Pizani, Paulo Sérgio
Source: Physica Status Solidi B : basic research. Unidade: EESC
Subjects: SEMICONDUTORES, DIAMANTE, DUCTILIDADE, MUDANÇA DE FASE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart e PIZANI, Paulo Sérgio. On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, v. 244, n. Ja 2007, p. 261-265, 2007Tradução . . Disponível em: https://doi.org/10.1002/pssb.200672554. Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G., & Pizani, P. S. (2007). On the ductile response dependence upon phase transformation in diamond turning of semiconductors. Physica Status Solidi B : basic research, 244( Ja 2007), 261-265. doi:10.1002/pssb.200672554
NLM
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1002/pssb.200672554
Vancouver
Jasinevicius RG, Pizani PS. On the ductile response dependence upon phase transformation in diamond turning of semiconductors [Internet]. Physica Status Solidi B : basic research. 2007 ; 244( Ja 2007): 261-265.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1002/pssb.200672554
Artigo de periodico
Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool (2006)
Jasinevicius, Renato Goulart
Source: Journal of Materials Processing Technology. Unidade: EESC
Assunto: SEMICONDUTORES
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ABNT
JASINEVICIUS, Renato Goulart. Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. Journal of Materials Processing Technology, v. 179, n. 1-3, p. 11-116, 2006Tradução . . Disponível em: https://doi.org/10.1016/j.jmatprotec.2006.03.106. Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G. (2006). Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. Journal of Materials Processing Technology, 179( 1-3), 11-116. doi:10.1016/j.jmatprotec.2006.03.106
NLM
Jasinevicius RG. Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool [Internet]. Journal of Materials Processing Technology. 2006 ; 179( 1-3): 11-116.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jmatprotec.2006.03.106
Vancouver
Jasinevicius RG. Influence of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool [Internet]. Journal of Materials Processing Technology. 2006 ; 179( 1-3): 11-116.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1016/j.jmatprotec.2006.03.106
Artigo de periodico
Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy (2005)
Jasinevicius, Renato Goulart; Porto, Arthur José Vieira; Pizani, Paulo Sérgio; Duduch, Jaime Gilberto; Santos, Francisco José
Source: Materials Research. Unidade: EESC
Subjects: SEMICONDUTORES, MUDANÇA DE FASE, DUCTILIDADE
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart et al. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, v. 8, n. 3, p. 261-268, 2005Tradução . . Disponível em: https://doi.org/10.1590/s1516-14392005000300007. Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G., Porto, A. J. V., Pizani, P. S., Duduch, J. G., & Santos, F. J. (2005). Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy. Materials Research, 8( 3), 261-268. doi:10.1590/s1516-14392005000300007
NLM
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Vancouver
Jasinevicius RG, Porto AJV, Pizani PS, Duduch JG, Santos FJ. Characterization of structural alteration in diamond turned silicon crystal by means of micro raman spectroscopy and transmission electron microscopy [Internet]. Materials Research. 2005 ; 8( 3): 261-268.[citado 2024 nov. 03 ] Available from: https://doi.org/10.1590/s1516-14392005000300007
Trabalho de evento
Influences of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool (2005)
Jasinevicius, Renato Goulart
Conference titles: Congresso Brasileiro de Engenharia de Fabricação. Unidade: EESC
Assunto: SEMICONDUTORES
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ABNT
JASINEVICIUS, Renato Goulart. Influences of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. 2005, Anais.. Joinville: ABCM, 2005. . Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G. (2005). Influences of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. In . Joinville: ABCM.
NLM
Jasinevicius RG. Influences of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. 2005 ;[citado 2024 nov. 03 ]
Vancouver
Jasinevicius RG. Influences of cutting conditions scaling in the machining of semiconductors crystals with single point diamond tool. 2005 ;[citado 2024 nov. 03 ]
Trabalho de evento
On the possibility of produce microstructures in soft semiconductors by diamond turning based upon transition pressure value concept (2004)
Jasinevicius, Renato Goulart
Source: Proceedings of the euspen. Conference titles: International Conference of the European Society for Precision Engineering and Nanotechnology. Unidade: EESC
Assunto: SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
JASINEVICIUS, Renato Goulart. On the possibility of produce microstructures in soft semiconductors by diamond turning based upon transition pressure value concept. 2004, Anais.. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo, 2004. . Acesso em: 03 nov. 2024.
APA
Jasinevicius, R. G. (2004). On the possibility of produce microstructures in soft semiconductors by diamond turning based upon transition pressure value concept. In Proceedings of the euspen. Glasgow: Escola de Engenharia de São Carlos, Universidade de São Paulo.
NLM
Jasinevicius RG. On the possibility of produce microstructures in soft semiconductors by diamond turning based upon transition pressure value concept. Proceedings of the euspen. 2004 ;[citado 2024 nov. 03 ]
Vancouver
Jasinevicius RG. On the possibility of produce microstructures in soft semiconductors by diamond turning based upon transition pressure value concept. Proceedings of the euspen. 2004 ;[citado 2024 nov. 03 ]

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