Low-temperature Al-induced crystallization of amorphous Ge (2005)
Zanatta, Antonio Ricardo 
; Chambouleyron, I.
Fonte: Journal of Applied Physics. Unidade: IFSC
Assuntos: ESPECTROSCOPIA, SEMICONDUTORES, FILMES FINOS
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ABNT
ZANATTA, Antonio Ricardo e CHAMBOULEYRON, I. Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, v. 97, n. 11, p. 094914-1-094914-11, 2005Tradução . . Disponível em: https://doi.org/10.1063/1.1889227. Acesso em: 18 nov. 2025.APA
Zanatta, A. R., & Chambouleyron, I. (2005). Low-temperature Al-induced crystallization of amorphous Ge. Journal of Applied Physics, 97( 11), 094914-1-094914-11. doi:10.1063/1.1889227NLM
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.1889227Vancouver
Zanatta AR, Chambouleyron I. Low-temperature Al-induced crystallization of amorphous Ge [Internet]. Journal of Applied Physics. 2005 ; 97( 11): 094914-1-094914-11.[citado 2025 nov. 18 ] Available from: https://doi.org/10.1063/1.1889227
