Source: Anais. Conference titles: Congresso da Sociedade Brasileira de Microeletronica. Unidade: EP
Subjects: SILÍCIO, SEMICONDUTORES
ABNT
SANTOS FILHO, Sebastião Gomes dos e SWART, Jacobus Willibrordus. Use of the charge pumping technique for the evaluation of mosfet degradation due to stress in silicide / polysilicon double layer. 1990, Anais.. Campinas: Sbmicro/Spie, 1990. . Acesso em: 17 out. 2024.APA
Santos Filho, S. G. dos, & Swart, J. W. (1990). Use of the charge pumping technique for the evaluation of mosfet degradation due to stress in silicide / polysilicon double layer. In Anais. Campinas: Sbmicro/Spie.NLM
Santos Filho SG dos, Swart JW. Use of the charge pumping technique for the evaluation of mosfet degradation due to stress in silicide / polysilicon double layer. Anais. 1990 ;[citado 2024 out. 17 ]Vancouver
Santos Filho SG dos, Swart JW. Use of the charge pumping technique for the evaluation of mosfet degradation due to stress in silicide / polysilicon double layer. Anais. 1990 ;[citado 2024 out. 17 ]